X-ray photoelectron diffraction of the silicon–diamond interface

Maillard-Schaller, E.; Kuettel, O.M.; Schlapbach, L.

doi:10.1002/pssa.2211530216

Cited by 16 publications

(7 citation statements)

References 28 publications

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“…Actually, simulations of diamond XPD patterns for different thicknesses reported in literature show a strong variation especially within the first 5 ML [29].…”

Section: Discussionmentioning

confidence: 90%

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Gsell

Berner

Brugger

et al. 2008

Diamond and Related Materials

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Comparative electron diffraction study of the diamond nucleation layer on Ir (001) Gsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, BGsell, S; Berner, S; Brugger, T; Schreck, M; Brescia, R; Fischer, M; Greber, T; Osterwalder, J; Stritzker, B (2008 Comparative electron diffraction study of the diamond nucleation layer on Ir(001) AbstractThe carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) the carbon nucleation layer does not give any indication of crystalline diamond even if the presence of domains proves successful nucleation. In contrast, X-ray photoelectron diffraction (XPD) shows a clear C 1s pattern when domains are present after BEN. The anisotropy in the Ir XPD patterns is reduced after BEN while the fine structure is essentially identical compared to a single crystal Ir film. The change in the Ir XPD patterns after BEN can be explained by the carbon layer on top of a crystallographically unmodified Ir film. The loss and change in the fine structure of the C 1s patterns as compared to a single crystal diamond film are discussed in terms of mosaicity and a defective structure of the ordered fraction within the carbon layer.The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix. The carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction terms of mosaicity and a defective structure of the ordered fraction within the carbon layer. The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix.

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“…Actually, simulations of diamond XPD patterns for different thicknesses reported in literature show a strong variation especially within the first 5 ML [29].…”

Section: Discussionmentioning

confidence: 90%

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Gsell

Berner

Brugger

et al. 2008

Diamond and Related Materials

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“…The part of the oxygen signal at 532.7 eV attributed to the O-Si bond in SiO 2 . 39,40 The weak signals of silicon Si 2p and Si 2s at 99 and 151 eV, indicates that the most of silicon surface is covered by diamond films. 41 On the basis of XPS results, we confirm the existence of diamond as well as SiC.…”

Section: Resultsmentioning

confidence: 98%

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

Tiwari

Chang

2010

Journal of Applied Physics

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“…By rotation of the crystal, 3500 individual XPS spectra have been recorded and fitted. 16 The data are stereographically projected on a plane and represented in a gray scale, with maximum and minimum intensities as white and black, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…10͑b͒, respectively, 10͑d͒. Two diffractograms rotated by 90°have been summed in order to simulate the presence of two ␤-SiC domains on the substrate 16 and the diffractograms have not been normalized. Comparing Figs.…”

Section: Xpd Investigationsmentioning

confidence: 99%

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Local heteroepitaxy of diamond on silicon (100):mA study of the interface structure

et al. 1997

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An extensive study of the interface between highly oriented chemical vapor deposition diamond films and silicon has been performed using atomic force microscopy ͑AFM͒, high-resolution scanning electron microscopy ͑HRSEM͒, x-ray photoelectron diffraction ͑XPD͒, and transmission electron diffraction. The initial roughness of the silicon substrate has been investigated by AFM. Hydrogen plasma has been found to produce pits on the biased substrate surface. The local order of the ␤-SiC grown on silicon ͑100͒ during the biasenhanced nucleation step has been investigated by XPD through the C 1s and the Si 2p intensity modulations. Differences in the XPD diffraction features have been studied and found to be due to the element and energy dependence of the scattering effect. The preferential orientation of the diamond nuclei with respect to the silicon substrate has been quantified by comparison of HRSEM pictures and XPD patterns. Only 30-40 % of the crystallites have been found to be oriented relative to the substrate at an early growth stage of a highly oriented diamond film. The partial heteroepitaxy of the diamond nuclei has been confirmed by transmission electron microscopy through electron diffraction and bright-and dark-field images. Simulations of the XPD patterns induced by tilted and azimuthally rotated diamond crystallites have been performed in order to reproduce the smeared-out features of the experimental diffractograms. The short-range order of the diamond lattice at this early growth stage has been found. The amount of carbon on the silicon substrate has been measured by x-ray photoelectron spectroscopy and HRSEM. Comparing the results, we postulated the existence of carbon domains which are too small to be or become diamond nuclei and are etched away by the hydrogen plasma during the growth process.

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X-ray photoelectron diffraction of the silicon–diamond interface

Cited by 16 publications

References 28 publications

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

Growth, microstructure, and field-emission properties of synthesized diamond film on adamantane-coated silicon substrate by microwave plasma chemical vapor deposition

Local heteroepitaxy of diamond on silicon (100):mA study of the interface structure

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