X-Ray Photoelectron Spectroscopic Study of Oxidation of InP

Shibata, N.; Ikoma, Hideaki

doi:10.1143/jjap.31.3976

Cited by 39 publications

(27 citation statements)

References 20 publications

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“…The peak at 445.1eV in the In spectrum in Figure 4 (b) is related to the C peak at 285 eV that after correcting the charging effect can be assigned to an In-Oxide peak. 22,23 This indium oxide layer may contain plasma oxides grown during exposure to an oxygen plasma in the PECVD reaction chamber that has been verified by in-depth XPS analysis on PECVD deposited SiO 2-x /InP interface and it is always close to SiO 2-x layer. 24 At the SiO 2-x /InP interface 2, there are two additional peaks in the P 2s spectra.…”

Section: Resultsmentioning

confidence: 83%

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

2011

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The ability of a UV laser to modify surface properties of quantum well (QW) microstructures that would lead to formation of a "defective layer" is of particular interest to the process of QW intermixing (QWI). We discuss the results of surface and interface study of InGaAs/InGaAsP QW microstructures capped with InP and a 243-nm thick layer of SiO 2-x that were irradiated with a KrF excimer laser delivering up to 25 pulses at 124 mJ/cm 2 . The optical quality of SiO 2 films remains relatively unaffected by the irradiation with the KrF laser operating in the investigated window of parameters. The x-ray photoelectron spectroscopy experiments point out the negligible role of SiO 2-x in out-diffusion of matrix atoms that would enhance the QWI process. However, the KrF laser was found to significantly modify the interface between UV transparent SiO 2-x and the InP layer. Our results suggest that the resulting layer of the altered material promotes out-diffusion of atoms and intermixing in the QW region.

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Section: Resultsmentioning

confidence: 83%

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

2011

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“…Reference values of the binding energy for indium 3d 5/2 are: 444.2 eV for InP, 445.0 eV for In 2 O 3 , 445.7 eV for InPO 3 , and 446.0 eV for InPO 4 . 12 In Fig. 2a, indium 3d 5/2 peak for pH 5 grown oxide is observed at or near the In 2 O 3 reference energy value.…”

Section: Composition Analysismentioning

confidence: 82%

Improved electrical properties on the anodic oxide/InP interface for MOS structures

Sumathi

Dharmarasu

Arulkumaran

et al. 1998

Journal of Elec Materi

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The interface properties of the anodic oxide/n-type (111) InP metal oxide semiconductor (MOS) structures significantly improved while using the polishing agent HBr:K 2 Cr 2 O 7 :H 2 O (BCA). Annealing at 250°C dehydrates the grown oxides and has a strong effect on the surface potential. Composition of the oxides analyzed using x-ray photoelectron spectroscopy showed that the oxides are composed of In 2 O 3 , InPO 3 , and InPO 4 . MOS structures fabricated on BCA polished substrates show a lower surface state density of 6 × 10 10 cm -2 eV -1 when compared to the substrates polished with bromine-methanol (8 × 10 10 cm -2 eV -1 ).

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“…The higher average atomic percentage of indium, 56%, relative to phosphorus, 44%, can be attributed to the indium-rich native oxide layer typically observed on InP. 30 The current across three electrode pairs, connected in parallel, during the growth of InP nanowires at a constant bias of 1 V is plotted in Figure 4. The pure TOP solution is relatively insulating with a conductivity below 3 S. Drop-wise injection of the indium and phosphorus precursors begins at 100 s and the growth-solution maintains its low initial conductivity until the current begins to rapidly increase at ϳ200 s. The rapid increase in current slows down at ϳ260 s and precursor injection is completed at 280 s. The current then shows a slow linear increase over the period from 280 to 400 s, while the sample remains in solution under constant bias.…”

Section: Resultsmentioning

confidence: 99%

Electrically Controlling and Monitoring InP Nanowire Growth from Solution

2009

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Indium phosphide nanowires are of significant technological interest for applications ranging from single junction solar cells to high speed electronics. However, the efficient placement and integration of nanowires into devices remains a significant challenge. Here we extend the technique of electrically controlled solution-liquid-solid (EC-SLS) catalytic nanowire growth to indium phosphide. We are able to control the amount of nanowire growth by varying the bias voltage between the electrodes in solution, and to monitor nanowire bridging across the electrodes by recording the conductivity as a function of growth time. The as-grown indium phosphide nanowires exhibit n-type conductivity as was determined by the in situ integration of nanowires into a field effect transistor geometry. The ability to monitor nanowire growth and electrically control nanowire placement are valuable tools for fabricating nanowire devices. The EC-SLS process has the potential to aid in the fabrication of nanowire devices that could find applications in nanoelectronics, and as electrodes in solar cells and batteries.

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X-Ray Photoelectron Spectroscopic Study of Oxidation of InP

Cited by 39 publications

References 20 publications

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

Improved electrical properties on the anodic oxide/InP interface for MOS structures

Electrically Controlling and Monitoring InP Nanowire Growth from Solution

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