X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms

Abstract

The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650–750 °C) occurs via a Stranski–Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at ≈10–15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800 °C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750–900 °C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism.

Effect of ammoniating temperature on microstructure and optical properties of one-dimensional GaN nanowires doped with magnesium

“…3(b) is centered at 397.6 eV, instead of 399 eV (binding energy of N element existing as atomic style), similar to the results of Li (397.4 eV) [20] and Veal (397.6 eV) [21], i.e., the N atom exists as a nitride. The width and slight asymmetry of the N1s peak are attributed to N-H 2 and N-H 3 formation due to the interaction between N 2 and NH 3 at the GaN film surface [22]. As seen in Fig.…”

Preparation and characterization of one-dimensional GaN nanorods with Tb intermediate layer

“…4(d) is centered at 397.6 eV, instead of 399 eV (binding energy of N element existing as atomic style), similar to the results of Li (397.4 eV) [23] and Veal (397.6 eV) [21], that is, the N atom exists as a nitride. The width and slight asymmetry of the N1s peak are attributed to N-H 2 and N-H 3 formation due to the interaction between N 2 and NH 3 at the GaN film surface [24]. The O1s peak is centered at 530.7 eV.…”

Influence of ammoniating time on the microstructure of Mg-doped GaN nanowires

“…4(b) is centered at 397.6 eV, instead of 399 eV (binding energy of N element existing as atomic style), similar to the results of Li (397.4 eV) [16] and Veal (397.6 eV) [17], that is, the N atom exists as a nitride. The width and slight asymmetry of the N1s peak are attributed to N-H 2 and N-H 3 formation due to the interaction between N 2 and NH 3 at the GaN film [18] surface.…”