X-ray photoelectron spectroscopy of polycrystalline AlN surface exposed to the reactive environment of XeF2

Watanabe, Morimichi; Mori, Yukimasa; Ishikawa, Takahiro; Iida, Takashi; Akiyama, Keijiro; Sawabe, Kyoichi; Shobatake, Kosuke

doi:10.1016/s0169-4332(03)00577-4

Cited by 15 publications

(8 citation statements)

References 12 publications

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“…AlN ceramics have already attracted considerable attention as components of semiconductor manufacturing equipment [2]. In addition, AlN ceramics are generally used as electrostatic chucks, wave-absorbing materials, plasma etching electrodes, EDM-machinable ceramic substrates, and electrical feedthroughs [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Mechanical, electrical, and thermal properties of graphene nanosheet/aluminum nitride composites

Yun

Feng

Qiu

et al. 2015

Ceramics International

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Section: Introductionmentioning

confidence: 99%

Mechanical, electrical, and thermal properties of graphene nanosheet/aluminum nitride composites

Yun

Feng

Qiu

et al. 2015

Ceramics International

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“…Aluminum nitride (AlN) ceramics are highly thermal conductive nonmetallic materials. Their unique properties, including high thermal conductivity, low dielectric constant, high electrical resistance, wide band gap ( E g = 6.2 eV at room temperature, RT), strong mechanical properties, chemical inertness, and similar thermal expansion coefficient to silicon, make AlN a promising candidate for electronic substrates and electrostatic chucks .…”

Section: Introductionmentioning

confidence: 99%

AC Impedance Spectroscopy of CaF₂‐doped AlN Ceramics

Lee

Kim

2013

J. Am. Ceram. Soc.

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The electrical conductivity of CaF 2 -doped aluminum nitride (AlN) ceramics was characterized at high temperatures, up to 500°C, by AC impedance spectroscopy. High thermal conductive CaF 2 -doped AlN ceramics were sintered with a second additive, Al 2 O 3 , added to control the electrical conductivity. The effects of calcium fluoride (CaF 2 ) on microstructure and related electrical conductivity of AlN ceramics were examined. Investigation into the microstructure of specimens by TEM analysis showed that AlN ceramics sintered with only CaF 2 additive have no secondary phases at grain boundaries. Addition of Al 2 O 3 caused the formation of amorphous phases at grain boundaries. Addition of Al 2 O 3 to CaF 2 -doped AlN ceramics at temperatures 200°C-500°C revealed a variation in electrical resistivity that was four orders of magnitude larger than for the specimen without Al 2 O 3. The amorphous phase at the grain boundary greatly increases the electrical resistivity of AlN ceramics without causing a significant deterioration of thermal conductivity.

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“…Aluminum nitride (AlN) has attracted significant attention because of its low thermal expansion coefficient ((4.03–6.0) × 10 –6 K –1 ) near to that of silicon, a wide band gap (6.2 eV), excellent thermal conductivity (3.2 W/(cm K)), high chemical stability, high electrical resistivity (>4 × 10 8 Ω cm), and good mechanical properties at high temperatures. − Therefore, it is widely applied as structural ceramics, , sintering additives, , semiconductor devices, optoelectronic and field emission devices, and so on. However, the propensity for AlN to hydrolyze and generate ammonia precludes the use of water during the manufacturing process of AlN substrates, which increases the cost and complexity of the process .…”

Section: Introductionmentioning

confidence: 99%

Adsorption and Reaction of Water on the AlN(0001) Surface from First Principles

et al. 2019

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Aluminum nitride (AlN) with a combination of very high thermal conductivity and excellent electrical insulation properties exhibits wide applications. However, it is quite sensitive to a moist environment and hydrolyzes slowly in water. In this work, density functional theory was adopted to examine the atomistic reaction mechanism on the wurtzite AlN( 0001) surface. The results indicate that water molecules are preferentially adsorbed at the top site of the AlN(0001) surface. The decomposition of adsorbed H 2 O into OH and H on the AlN(0001) surface occurs spontaneously without any energy barrier. However, a further dissociation reaction of OH into O and H has an energy barrier of 22.046 kcal/ mol. The dissociation of H 2 O is strongly dependent on the H 2 O coverage when more water molecules are adsorbed. Ammonia (NH 3 ) is determined as the dominant gas product at 4/9 monolayer H 2 O coverage, which will induce N vacancy (V N ) formation in AlN ceramic. The V N will be occupied by O 2− after geometry optimization and plays an acceleration role in the degradation of AlN by water. H 2 O adsorption and the formation of NH 3 occur alternately with the H 2 O coverage increasing. An OH−Al−O layer is formed as a precursor of AlOOH after the first AlN bilayer is fully degraded. This work can guide the manufacture and application of AlN from the theoretical viewpoint.

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X-ray photoelectron spectroscopy of polycrystalline AlN surface exposed to the reactive environment of XeF2

Cited by 15 publications

References 12 publications

Mechanical, electrical, and thermal properties of graphene nanosheet/aluminum nitride composites

Mechanical, electrical, and thermal properties of graphene nanosheet/aluminum nitride composites

AC Impedance Spectroscopy of CaF₂‐doped AlN Ceramics

Adsorption and Reaction of Water on the AlN(0001) Surface from First Principles

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X-ray photoelectron spectroscopy of polycrystalline AlN surface exposed to the reactive environment of XeF2

Cited by 15 publications

References 12 publications

Mechanical, electrical, and thermal properties of graphene nanosheet/aluminum nitride composites

Mechanical, electrical, and thermal properties of graphene nanosheet/aluminum nitride composites

AC Impedance Spectroscopy of CaF2‐doped AlN Ceramics

Adsorption and Reaction of Water on the AlN(0001) Surface from First Principles

Contact Info

Product

Resources

About

AC Impedance Spectroscopy of CaF₂‐doped AlN Ceramics