X-ray photoelectron spectroscopy studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations

Sharma, Neha; Ilango, S.; Dash, S.; Tyagi, A.K.

doi:10.1016/j.tsf.2017.07.006

Cited by 28 publications

(12 citation statements)

References 23 publications

(32 reference statements)

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“…No magnetic signals were observed in the measurements performed on the bare sample holder and 7 samples. Signatures of magnetic impurities could not be detected in X-ray photoemission spectroscopy measurements performed on the AlN thin films up to a depth of 50 nm [31].…”

Section: Resultsmentioning

confidence: 87%

Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

2017

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Defect induced magnetism is reported in undoped aluminium nitride thin films deposited using reactive ion beam sputtering of aluminium in nitrogen plasma. The films have been deposited on silicon substrate at different temperatures. Existence of the defects in the films have been verified using room temperature photo-luminescence measurements. Owing to nano crystalline nature of the films, supermagnetic ground states have been observed. A cross-over from super paramagnetic to super spin glass state has been observed as the grain density increases. Detailed magnetisation measurements along with AC susceptibility measurements have been used to determine the ground states in these AlN thin films.

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Section: Resultsmentioning

confidence: 87%

Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

2017

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“…However, the change in the nitrogen content is considered to be not significant. As shown by Sharma et al by means of XPS, a small change in the substrate temperature from room temperature to 100 °C does not lead to a change in the chemical shifts [39]. However, a higher change of the substrate temperature from room temperature to 500 °C alters the chemical shift of the N-1s bonding [39].…”

Section: Resultsmentioning

confidence: 99%

“…As shown by Sharma et al by means of XPS, a small change in the substrate temperature from room temperature to 100 °C does not lead to a change in the chemical shifts [39]. However, a higher change of the substrate temperature from room temperature to 500 °C alters the chemical shift of the N-1s bonding [39]. The highest nitrogen content of 57.9 ± 0.3 at.-% is measured for the AlN-3 thin film, which is caused by the higher nitrogen content to noble gas ratio in the deposition chamber due to the used gas flow rates.…”

Section: Resultsmentioning

confidence: 99%

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Tillmann

Kokalj

Stangier

et al. 2019

Sensors

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Thin film thermocouples are widely used for local temperature determinations of surfaces. However, depending on the environment in which they are used, thin film thermocouples need to be covered by a wear or oxidation resistant top layer. With regard to the utilization in wide-slit nozzles for plastic extrusion, Ni/Ni-20Cr thin film thermocouples were manufactured using direct-current (DC) magnetron sputtering combined with Aluminiumnitride (AlN) and Boron-Carbonitride (BCN) thin films. On the one hand, the deposition parameters of the nitride layers were varied to affect the chemical composition and morphology of the AlN and BCN thin films. On the other hand, the position of the nitride layers (below the thermocouple, above the thermocouple, around the thermocouple) was changed. Both factors were investigated concerning the influence on the Seebeck coefficient and the reaction behaviour of the thermocouples. Therefore, the impact of the nitride thin films on the morphology, physical structure, crystallite size, electrical resistance and hardness of the Ni and Ni-20Cr thin films is analysed. The investigations reveal that the Seebeck coefficient is not affected by the different architectures of the thermocouples. Nevertheless, the reaction time of the thermocouples can be significantly improved by adding a thermal conductive top coat over the thin films, whereas the top coat should have a coarse structure and low nitrogen content.

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“…The present results satisfied the binding energies values with the previous existing XPS data of gallium oxide deposition analysis. [27][28][29]…”

Section: Resultsmentioning

confidence: 99%

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

Yaseen

Nunes

Sacciloti

et al. 2019

ECS J. Solid State Sci. Technol.

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The main purpose of this study was to optimize the GaxOy growth on different substrates surfaces under constant deposition temperature. Metallic gallium in liquid form was successfully deposited on Ti alloy, Silicon and Sapphire substrates by using metallorganic chemical deposition technique. It resulted in microspherical-shaped liquid gallium (GaxOy) just by adjusting the deposition parameters such as temperature, partial pressure and time. For these results, oxygen was not properly provided during the deposition. SEM, XRD, PL (photoluminescence) and XPS techniques featured the morphology and structure of the samples “as-deposited”. The growth at 650°C resulted in randomly distributed GaxOy microspheres with the diameter ranging between 80nm and 200nm and amorphous or polycrystalline phase. Peaks of the PL spectra at 420nm (Ti alloy), 480nm (Si) and 410nm (Sapphire) revealed oxygen-based defects in the deposition layer. Further, XPS confirmed the presence of Ga and oxygen with specific binging energy and atomic concentration.

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X-ray photoelectron spectroscopy studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations

Cited by 28 publications

References 23 publications

Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

Defect induced magnetism and super spin glass state in reactive ion beam deposited nano-structured AlN thin films

Effects of AlN and BCN Thin Film Multilayer Design on the Reaction Time of Ni/Ni-20Cr Thin Film Thermocouples on Thermally Sprayed Al2O3

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

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