X-Ray photoelectron spectroscopy study of CdTe oxide films grown by rf sputtering with an Ar–NH3 plasma

Bartolo‐Pérez, P.; Castro-Rodrı́guez, R.; Caballero‐Briones, F.; Cauich, W.; Peña, J. L.; Farı́as, M.H.

doi:10.1016/s0257-8972(02)00028-2

Cited by 37 publications

(30 citation statements)

References 12 publications

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“…The sensitivity factors were S Te/Cd -Te =1.55 and S Te/Te -O = 1.33 taking as reference S Cd =1 as reported in Ref. [16]. Thus, the compound concentrations in the sample were found to be 89% for CdTeO 3 and 11% for CdTe.…”

Section: Resultsmentioning

confidence: 55%

Obtaining of polycrystalline CdTeO3 by reactive pulse laser deposition

et al. 2005

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Section: Resultsmentioning

confidence: 55%

Obtaining of polycrystalline CdTeO3 by reactive pulse laser deposition

et al. 2005

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“…The samples oxygen content was determined by AES in an ESCA/SAM PHI 560, using previously reported sensitivity factors and measuring conditions [2,3,6]. Samples were eroded during 1 min with a 4 keV Ar + beam before analysis.…”

Section: Methodsmentioning

confidence: 99%

“…The study of the optical properties of a-CdTe:O films revealed that the optical energy gap can be tuned between 1.48 eV and 3.35 eV by controlling the oxygen content in the films [1]. Preparation of CdTe oxide films is usually carried out by radio frequency (rf) sputtering deposition using a CdTe target, and the consequent addition a highly oxidizing gas such as N 2 O [2][3][4][5], NH 3 [6] or even N 2 , which catalyses the oxidation of CdTe by means of the residual or added oxygen in the vacuum chamber [1,7,8]. In previous works it was demonstrated that the oxygen incorporation to CdTe changes gradually the tellurium valence from Te − 2 to Te + 4 [2,3], forming amorphous CdTe oxides ranging from a-CdTe:O to aCdTeO 3 .…”

Section: Introductionmentioning

confidence: 99%

Chemical and microstructural study in radio frequency sputtered CdTe oxide films prepared at different N2O pressures. Oxygen incorporation and film resputtering

et al. 2008

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“…In the last years amorphous CdTe oxide thin films have been extensively studied [29][30][31][32][33][34][35][36][37], mainly because this material could play in CdTe solar cells technology a similar role to that of SiO 2 in Si technology. Native oxides have also been identified on CdTe surfaces [38].…”

Section: Amorphous Cdteomentioning

confidence: 99%

Computer simulation study of amorphous compounds: structural and vibrational properties

et al. 2010

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Molecular dynamic (MD) simulations, both classical and ab initio, of amorphous GeO 2 (germania), Al 2 O 3 (alumina), and CdTeO compounds are presented. We focus our attention on the structural and vibrational properties, giving an atomic description of the short-and intermediate-range order. Amorphous germanium oxide under pressure was studied by means of classical MD simulations. At normal density, the analysis of the interatomic distances reveals that in the amorphous state there is a short-range order dominated by a slightly distorted (GeO 4 ) tetrahedron. Beyond that, there is an intermediaterange order composed by vertex-sharing tetrahedra. As density increases, there is a structural transformation, from a short-range order defined by the basic tetrahedron to a basic octahedron. Consistent with this picture, the vibrational density of states also presents big changes, where the low frequency band shrinks, and the high frequency becomes wider and flatter. In the case of alumina, both classical and first principles MD calculations of amorphous Al 2 O 3 are reported, comparing both methodologies. Interatomic correlations allow us to conclude that the shortrange order is mainly composed by AlO 4 tetrahedra, but in contrast to classical MD results, also an important number of AlO 5 unit is present. The vibrational density of states presents two main bands, a low frequency one related to the inter-tetrahedron vibration and a high frequency band related to the intra-tetrahedron vibration. Finally, we present an ab initio MD calculation for the complex ternary material CdTeO 3 . According our calculations, the shortrange order of this compound consists of a number of basic building blocks, greater than in the case of its crystalline counterpart. The compound is characterized using pair and angular distribution functions, coordination numbers, and a description of the molecular units of the compound. For example, Cd is coordinated by either six or five atoms. In the case of Te, the chemical unit is TeO 3 . The most frequent clusters are CdO 6 , CdO 5 , TeO 3 , and TeO 4 .

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X-Ray photoelectron spectroscopy study of CdTe oxide films grown by rf sputtering with an Ar–NH3 plasma

Cited by 37 publications

References 12 publications

Obtaining of polycrystalline CdTeO3 by reactive pulse laser deposition

Obtaining of polycrystalline CdTeO3 by reactive pulse laser deposition

Chemical and microstructural study in radio frequency sputtered CdTe oxide films prepared at different N2O pressures. Oxygen incorporation and film resputtering

Computer simulation study of amorphous compounds: structural and vibrational properties

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