Obtaining of polycrystalline CdTeO3 by reactive pulse laser deposition

Photoluminescence properties of the ZnO–CdO–TeO2 system doped with the Tb3+and Yb3+ ions

“…The 2y-positions of the phase-centered cubic CdTeO 3 standard pattern 22-0129 were included in the figure in order to enhance the concordance between standard reflections and the reflections corresponding at our samples. CdTeO 3 is a well-known semiconductor oxide, which has also been obtained as thin films in cubic phase by air annealing on CdTe:O [10] and by laser ablation [11]. In both types of our samples, the amorphous background, part in, can be due to the inclusion of ZnO, mainly in the form of tetrahedra-ZnO 4 [12].…”

Structural properties of thin films of the novel Cux(CdTe)yOz semiconductor system

“…Related amorphous ''oxygenated'' cadmium telluride films by RF sputtering, have been reported by other authors; however, they used N 2 /O 2 /Ar [11,12] or N 2 O (nitrous oxide)/Ar mixtures [23] as the growth atmosphere; in the present work, no nitrogen is intentionally introduced in the growth chamber. Polycrystalline CdTeO 3 films have been obtained (without any CdTe or other materials being observed), on the other hand, by using a pure O 2 atmosphere during growth by reactive pulsed laser deposition with CdTe targets [24]. When CdTe is analyzed by Raman spectroscopy, both as monocrystal and film, bands associated with metallic tellurium are frequently observed; such signals are ascribed to Te atomic clusters and are easily detected by this analytical technique, in contrast with others [25].…”

Growth of polycrystalline InP thin films by the pulsed laser deposition technique

“…This is because at higher substrate temperature a significant quantity of phosphorus that arrives on the substrate suffers stronger preferential evaporation from the growth front. Metallic oxidation has been found in several materials grown by PLD under O 2 ambient [13,14].…”