X-ray photoelectron spectroscopy study of the surface chemistry of freon-oxygen plasma etched silicon

Thomas, J. H.; Maa, Jer‐Shen

doi:10.1063/1.94528

Cited by 26 publications

(13 citation statements)

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“…This is higher in binding energy than Si in tetrahedral bond with O and is probably due to OF bonds as observed earlier by Thomas and Maa in residue layers on CFJO2 etched silicon (35). The peak due to the residue layer occurs at approximately 104 eV.…”

Section: Resultssupporting

confidence: 59%

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

Thomas

Hammer

1989

J. Electrochem. Soc.

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X-ray photoelectron spectroscopy has been used to characterize CF4/30% H2 reactive ion etching residue on the tantalum disilicide surface after removing 100 nm of silicon dioxide. This was done to simulate the structure of multilevel metallization presently being encountered in integrated circuit manufacture. At a pressure of 80 millitorr and a power density of 1 W/cm 2, the residue layer formed consists chemically of a mixed tantalum and silicon fluoride and oxide-like film. This layer is complex and does not appear to contain polymeric fluorocarbon as has been observed on silicon at slightly higher hydrogen concentrations in the glow discharge. Its thickness is estimated to be 3 nm based on electron escape depths. The presence of SiQ causes the surface residue layer to be more oxygen rich in comparison with the uncoated tantalum disilicide surface. Sputtering does occur at a self-bias of 300V and results in preferentially removing silicon. Corelevel binding energies are reported for tantalum disilicide, the etch residue, the native oxide on the disilicide, and some related materials for reference purposes.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-23 to IP

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Section: Resultssupporting

confidence: 59%

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

Thomas

Hammer

1989

J. Electrochem. Soc.

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“…This peak cannot be assigned to Li 2 CO 3 as the binding energy of this component is not in good agreement with that of Li 2 CO 3 and the two contributions of lithium alkyl carbonates, and there are not enough oxidized carbon atoms to account for all of the oxygen atoms in the form of carbonates. As the O 1s binding energies of metal oxyfluoride species such as Al−O−F (∼532.7 eV) and Si x OF y (532.9 eV) are close to 532.8 eV, the formation of (OH) y PF x like species such as (OH)PF 4 , (OH) 2 PF 3 , (OH) 3 PF 2 , or (OH) 4 PF is likely to occur on the surface of the cycled coated electrodes. However, based on the surface composition analysis, (OH) 2 PF 3 appears to be the most likely candidate.…”

Section: Resultsmentioning

confidence: 99%

Probing the Origin of Enhanced Stability of “AlPO₄” Nanoparticle Coated LiCoO₂ during Cycling to High Voltages: Combined XRD and XPS Studies

et al. 2009

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AlPO 4 "-coated LiCoO 2 was shown to exhibit markedly improved capacity retention and reduced impedance growth relative to bare "LiCoO 2 " upon cycling to 4.7 V. Scanning electron microscopy imaging showed that the surfaces of the cycled bare "LiCoO 2 " particles remained very smooth whereas there were many newly formed patches distributed on the surfaces of the cycled coated particles. X-ray powder diffraction analyses revealed that select peak broadening was observed for cycled bare electrodes suggesting that structural damage to Li x CoO 2 was introduced upon cycling. In contrast, no apparent structural changes to Li x CoO 2 were found for cycled coated electrodes. Pristine and cycled bare and "AlPO 4 "-coated LiCoO 2 electrodes were studied by X-ray photoelectron spectroscopy. No significant change was detected in the surface chemistry of Co for cycled bare electrodes, but surface LiF and Li x PF y O z components were found to considerably increase during cycling, which led to partial surface coverage of Li x CoO 2 . A very small amount of Co-containing oxyfluoride species was detected on the cycled bare electrodes while considerable amounts of Co-containing and Al-containing fluorides and/or oxyfluorides and species such as PF x (OH) y were found on the cycled coated electrodes, which completely covered the surfaces of the Li x CoO 2 particles. The mechanism responsible for the enhanced cycling stability and reduced impedance of coated relative to bare electrodes is discussed in detail.

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“…[7][8][9][10][11][12][13][14][15] In the fluorocarbon high density plasma, however, it has not been confirmed whether this process proceeds effectively because of the difference in the plasma chemistry. Recently, it was reported that the SiO 2 /photoresist etching selectivity could be improved by the addition of oxygen to C 4 F 8 ECR plasma.…”

Section: Introductionmentioning

confidence: 90%

Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3

Takahashi

Hori

Goto

1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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X-ray photoelectron spectroscopy study of the surface chemistry of freon-oxygen plasma etched silicon

Cited by 26 publications

References 13 publications

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

Probing the Origin of Enhanced Stability of “AlPO₄” Nanoparticle Coated LiCoO₂ during Cycling to High Voltages: Combined XRD and XPS Studies

Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3

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X-ray photoelectron spectroscopy study of the surface chemistry of freon-oxygen plasma etched silicon

Cited by 26 publications

References 13 publications

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

A Photoelectron Spectroscopy Study of CF 4 / H 2 Reactive Ion Etching Residue on Tantalum Disilicide

Probing the Origin of Enhanced Stability of “AlPO4” Nanoparticle Coated LiCoO2 during Cycling to High Voltages: Combined XRD and XPS Studies

Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. I. O2 addition to electron cyclotron resonance plasma employing CHF3

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Probing the Origin of Enhanced Stability of “AlPO₄” Nanoparticle Coated LiCoO₂ during Cycling to High Voltages: Combined XRD and XPS Studies