X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Spectroscopic ellipsometry model for optical constant of NiSi formed on silicon-on-insulator substrates

“…3,[5][6][7][8] Moreover, Ni silicidation is compatible with integration on SOI, as it gives a comparable yield as on bulk Si. Further, the use of nickel in the silicidation process allows a stoichiometric nickel monosilicide layer to be obtained at low temperature, with a relatively large temperature window, while avoiding the formation of the undesired, highly resistive, Ni 2 Si and NiSi 2 compounds.…”