X-Ray, Raman and Photoluminescence Study of Vacancy Ordered ?-Ga2Se3 under High Pressure

Optical Properties of Ga2Se3 under High Pressure

“…The effect of pressure on the band structure of such defect zinc-blende compound as Ga 2 Se 3 which includes numerous vacancies is expected to be different from those of the zinc-blende compounds. In this work, in order to obtain information about the effect of pressure on the band structure of Ga 2 Se 3 , the optical absorption spectrum is measured for b-Ga 2 Se 3 , whose atomic arrangement under high pressure has been already determined by X-ray diffraction [7]. …”

“…Results and Discussion Figure 1 shows the optical absorption spectra of b-Ga 2 Se 3 at room temperature and 148 K. Previously obtained photoluminescence (PL) spectrum at room temperature [7] is also shown in Fig. 1.…”

“…Figure 3 shows the pressure dependence of the exciton line energy. The previously obtained pressure dependence of the photoluminescence peak energy [7] is also shown in Fig. 3.…”

“…3 to a secondorder polynomial function of pressure. Although the exciton line energy is about 40 meV higher than the photoluminescence peak energy, the pressure coefficient of the exciton line energy at ambient pressure agrees well with that of photoluminescence peak energy, 46 meV/GPa [7]. Therefore, the pressure coefficient of the band gap energy at ambient pressure is estimated to be about 45 meV/GPa.…”

Memory Switching Characteristics in Amorphous Ga2Se3 Films

“…Ga 2 Se 3 is a member of this family and has very interesting electrical and optical properties. [2][3][4][5][6][7] This has become a matter of great interest, because it is a good candidate for optoelectronic applications. 7,8 Ga 2 Se 3 films can also be inserted at the interface of ZnSe and ZnTe to reduce the valence band discontinuity in p-ZnTe/p-ZnSe multilayer structures that are used in II-VI lasers with low switching voltages.…”