2001
DOI: 10.1002/1521-3951(200101)223:1<271::aid-pssb271>3.0.co;2-2
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Optical Properties of Ga2Se3 under High Pressure

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Cited by 11 publications
(13 citation statements)
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“…38,41 Specifically, both a decrease of the band gap from 1.9 to 1.6 eV between 0 and 9.3 GPa 38 and a increase of the band gap from 1.7 to 2.1 eV between 0 to 8 GPa 41 have been reported. Curiously, contradictory those results were strikingly different to those previously reported for isostructural β-Ga 2 Se 3 , that showed an increase of the band gap with pressure from optical absorption measurements 113 and that were supported by theoretical calculations. 74 Furthermore, those calculations additionally predicted a decrease of the direct band gap above 7.5 GPa in β-Ga 2 Se 3 .…”
Section: Electronic Properties Under Compressioncontrasting
confidence: 99%
“…38,41 Specifically, both a decrease of the band gap from 1.9 to 1.6 eV between 0 and 9.3 GPa 38 and a increase of the band gap from 1.7 to 2.1 eV between 0 to 8 GPa 41 have been reported. Curiously, contradictory those results were strikingly different to those previously reported for isostructural β-Ga 2 Se 3 , that showed an increase of the band gap with pressure from optical absorption measurements 113 and that were supported by theoretical calculations. 74 Furthermore, those calculations additionally predicted a decrease of the direct band gap above 7.5 GPa in β-Ga 2 Se 3 .…”
Section: Electronic Properties Under Compressioncontrasting
confidence: 99%
“…3,5 For DC-HgGa 2 Se 4 , we obtain an experimental ͑calculated͒ direct band gap of 1.93 eV ͑0.92 eV͒ at room pressure. Despite more accurate values of the direct band gaps can be obtained at higher absorption coefficients than 1500 cm −1 using thinner samples, 7 we have obtained a rather accurate pressure dependence of the direct band-gap energy as judged by the good agreement between the experimental and theoretical data at low pressures shown in Fig. 4.…”
Section: Ab Initio Calculationsmentioning
confidence: 70%
“…High-pressure (HP) studies on A II B 2 III X 4 VI compounds are receiving increasing interest. In particular, the A Ga 2 Se 4 ( A = Mn, Zn, and Cd) family has been recently studied by means of X-ray diffraction (XRD), Raman spectroscopy, and optical absorption measurements. In the last years, we have conducted several studies of HgGa 2 Se 4 at HP.…”
Section: Introductionmentioning
confidence: 99%