X-ray reciprocal space mapping of GaAs/AlAs quantum wires and quantum dots

Abstract

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The fine structure of X-ray diffuse scattering in the vicinity of high-angle superlattice Bragg reflections

“…Mark that the similar features around the small-angle Bragg reflections from superlattices [13], around the high-angle Bragg reflections [16] and around the substrate lattice reflections [14, 16−18] were repeatedly observed in literature. Some times these features were explained as an instrumental artifact.…”

High-resolution X-ray diffraction of silicon-on-nothing

“…A few methodologies adopted to analyse the experimental data reported here were previously employed to investigate periodically corrugated surfaces and interfaces, quantum wires and quantum dots (see e.g. Tapfer & Grambow, 1990;Macrander & Slusky, 1990;van der Sluis et al, 1993;Shen et al, 1993;Holý et al, 1993;Gailhanou et al, 1993;Darhuber et al, 1995). However, the results obtained in this work refer to an innovative process of the silicon technology recently designed to manufacture transistor architectures, fully adequate for the future nodes of the ITRS.…”

Shear strains in dry etched GaAs/AlAs wires studied by high resolution x-ray reciprocal space mapping

“…In principle, the full information about the geometrical shape ͑height, width, inclination of the sidewalls, period͒ as well as about the structural quality ͑strain and crystalline damage͒ can be obtained from a two-dimensional map of reciprocal space. [8][9][10][11] Figure 1͑a͒ shows a reciprocal space map around the ͑004͒ reciprocal lattice point ͑RLP͒ of an unstructured ͑as grown͒ GaAs/AlAs reference sample from the same wafer. ''S'' denotes the GaAs substrate peak, ''SL 0 '' and ''SL 1 '' the zero and first-order MQW peak, respectively.…”

“…This is attributed on one hand to the crude discretization of the shear strain distribution and on the other hand to the uncertainties in the wire structure, due to the degradation of the mask and the damage to the material underneath. 8 …”