Shear strains in dry etched GaAs/AlAs wires studied by high resolution x-ray reciprocal space mapping

Abstract

We have fabricated GaAs/AlAs quantum wires and quantum dots by means of molecular beam epitaxy, electron beam lithography, and subsequent reactive ion etching using SiCl 4 and O 2 . The nominal periods are 300 nm and 350 nm for both wire and dot samples. High resolution x-ray reciprocal space maps of the 350 nm samples exhibit not only satellites corresponding to a periodicity of 350 nm but also additional satellites corresponding to a period of three times 350 nm, whereas there are no such extra peaks in the maps of the 300 nm samples. These secondary satellites are shown to be associated with a discretization effect in electron beam writing. Moreover, we found, that the shear strain in the wires has a distinct influence on the intensities of these weak extra satellites. Hence, they provide a sensitive means for the assessment of shear strains in elastically relaxed quantum wires.

Order quantification of hexagonal periodic arrays fabricated byin situsolvent-assisted nanoimprint lithography of block copolymers

“…Grazing-incidence small-angle x-ray scattering (GISAXS) [8,17,18] is one of the main techniques to characterize structural features of nanostructured polymer surfaces and thin films, and is capable of providing information on the nanometer scale along both lateral and vertical dimension over macroscopic regions. By utilizing an area detector, it is possible to extract information such as film thickness, particle geometry, and features of nanostructured surfaces.…”

Investigation of the relaxation behaviour of epitaxially grown wire structures by means of Monte‐Carlo‐Simulation

“…Since the early 90th when nano-structuring of semiconductor layers became possible [1,2,3] several investigations concerning the structural properties of these nano-structures were carried out [4,5,7,6]. The shadow mask technology for II-VI semiconductor layers opened the possibility to fabricate wire structures immediately during the growth [8].…”