X-ray reflectivity and glancing-incidence diffraction from thin metallic Cr layers

Bontempi, Laura E. Depero Elza

doi:10.1080/014186300255276

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…The broad modulation in the 900 and 1000°C XRR curves is attributed to the growth of a very thin oxide layer on the surface during annealing. 24,25 The broad modulation disappears after the oxide layer is removed with a dilute HF solution ͑see the curves for T a = 1100°C͒.…”

Section: A X-ray Reflectivitymentioning

confidence: 98%

Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

Song¹,

Cho²,

Conibeer³

et al. 2008

Journal of Applied Physics

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Amorphous Si 1−x C x / SiC multilayer films were prepared by alternating deposition of Si-rich Si 1−x C x and near-stoichiometric SiC layers by using magnetron sputtering. The as-deposited films were annealed at different temperatures ͑T a ͒ from 800 to 1100°C. The influence of T a and Si content in the Si-rich layer on the layered structural stability and on the formation of Si and/or SiC nanocrystals ͑NCs͒ is investigated by a variety of analytical techniques, including x-ray reflectivity ͑XRR͒, x-ray diffraction ͑XRD͒, transmission electron microscopy ͑TEM͒, Raman spectroscopy, and Fourier transform infrared spectrometry ͑FTIR͒. XRR showed that Si 1−x C x / SiC multilayers annealed at temperatures of up to 800°C retain their layered structure. XRD revealed that Si NCs were formed in samples with a high Si content in the Si-rich layer for T a Ն 800°C. At annealing temperatures of 900°C or greater, the formation of Si NCs was accompanied by the formation of ␤-SiC NCs. Additionally, the formation of Si and SiC NCs was confirmed by TEM imaging and Raman spectroscopy. The Si-NC size obtained from the TEM micrographs is within the range of 3-5 nm. The ␤-SiC NCs are smaller ͑2-3 nm͒ than Si NCs. Raman analysis identified an ϳ9 cm −1 Raman peak shift in the Si-NC peak to a lower energy with respect to that for bulk Si. FTIR Si-C bond absorption spectra exhibited narrowing of the full width at half maximum and a peak shift toward a higher wave number with increasing T a. This behavior can be explained by an increase in order as well as an increase in the number of Si-C bonds.

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Section: A X-ray Reflectivitymentioning

confidence: 98%

Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

Song¹,

Cho²,

Conibeer³

et al. 2008

Journal of Applied Physics

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Information on in- and out-of-plane correlated roughness in multilayers from x-ray specular reflectivity

Romanov¹,

Ul’yanov²,

Uzdin³

et al. 2008

J. Phys. D: Appl. Phys.

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Specular reflectivity measurements of artificial multilayers often exhibit a broadening of high order Bragg peaks and an intensity drop off that is slower than expected from the q −4 Fresnel dependence modified with a static Debye-Waller factor accounting for the interfacial roughness. This behaviour is described on the basis of a model that takes into account the finite size of the detector slit, which determines the instrumental resolution. The amplitude of the interface roughness as well as the in-and out-of-plane correlation lengths strongly affect the shape of the specular x-ray spectra. Information about in-plane and out-of-plane correlated roughness can be obtained, therefore, not only from diffuse scattering data but also from the quasi-specular reflectivity by relaxing the instrumental resolution. Moreover, for systems with short correlation lengths, quasi-specular reflectivity scans are more informative than rocking curves across Bragg reflections. The model is applied to the interpretation of x-ray scattering results on two multilayer systems: MgO(0 0 1)/[Fe(2 ML)/V(16 ML)] 30 and Si/SiO 2 /[CoFeB(3 nm)/MgO(1.5 nm)] 15 . The simulation of the experimental reflectivity scans properly describes the broadening of the higher order Bragg peaks, the damping of Kiessig fringes, and the increased intensity at higher scattering vectors as compared with the purely specular reflectivity.

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X-ray reflectivity and glancing-incidence diffraction from thin metallic Cr layers

Cited by 2 publications

References 29 publications

Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix

Information on in- and out-of-plane correlated roughness in multilayers from x-ray specular reflectivity

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