X-ray study of CuGa _x In_1−x Se₂ solid solutions

Abstract

The semiconducting compound CuGax I n~_xSe2 crystallizes in the chalcopyrite structure (space group

Three-step H2Se/Ar/H2S reaction of Cu-In-Ga precursors for controlled composition and adhesion of Cu(In,Ga)(Se,S)2 thin films

“…This shifts due to Ga homogenization after the 2nd step and the peak position 2h ¼ 26.82 (8 incident angle) corresponds to Ga/(In þ Ga) ¼ 0.19 when considering Vegard's law and the JCPDS database. 23,25,26 After the 3rd step, a broad second peak at 2h ¼ 27.70 is observed only for the scan with 0.5 incident angle and this is attributed to S diffusion at the front of the film.…”

Crystal structure re-investigation in wide band gap CIGSe compounds

“…1). These compounds crystallize in the expected chalcopyrite structure (space-group I-42d), usually used to describe these compounds [8,10]. Cu-poor compounds #4, #5, #6 are also located on a line corresponding to Cu/(In + Ga) = 0.71 (Fig.…”

“…Although the CIGSe compounds have been known for a long time, literature is very poor about crystal structure studies [8][9][10][11] especially by single crystal X-ray diffraction technique. In a previous study [12] we have shown that the chalcopyrite structure is no longer valid for the description of Cu-poor and high Ga-content CIGSe compounds.…”

Copper-Indium-Boron-Diselenide Absorber Materials

“…The expected shift in the CIS (112) peak for the selenized Cu x' In y' B z' film as a result of substituting the smaller boron atom for the indium is not apparent and any small shift may be more consistent with mixed CIS and Cu 1.8 Se phases [8][9][10]. The XRD spectra for the selenized precursors are seen in figure 2.…”