X-ray study of tin oxide films obtained by reactive DC sputtering from a metallic tin target in pure oxygen plasma

Structural analysis of Cd–Te–O films prepared by RF reactive sputtering

“…Moreover, the sputtered material would also react in the substrate. Upon its heating structural and chemical changes may be induced, depending on the growth conditions [16]. Taken the aforementioned into consideration, the approach proposed by Noguera et al seems to be more consistent with our conditions.…”

“…In the case of sputter deposited CdTeO films, it is proposed that at high N 2 O pressures the oxidant dissociates mainly in the target [14,15] thus forming an oxide layer, frequently named in the literature as target-poisoning [16]. The nature and stoichiometry of the compound that would be sputtered from the target is unknown, but following Miotto et al could be speculated that as Cd-O and Te-O bonds are formed upon oxygen absorption in detriment of CdTe bonds, the sputtered species will be closely TeO 2 and CdO [6] which relative amounts may vary depending on the plasma power.…”

Amorphous tungsten-doped In2O3 transparent conductive films deposited at room temperature from metallic target

“…The discharge voltage was not manually adjusted but shows a slight rise by 10% or so, automatically following the increase of the sputtering current. The similar phenomenon was also observed in a recent work on tin oxide films preparation by reactive dc sputtering by Martel et al [13]. The sputtering power varies from 33.3 to 82.6 W and the optimum resistivity of 5.8 Â 10 À4 XÁcm is attained at 71.6 W. Fig.…”

Gas phase synthesis of SnOx nanoparticles and characterization

“…It is evident that the size, crystallinity, purity, morphology and surface condition of the particles depend on the processing method and synthesizing parameters. Several procedures including spray pyrolysis [15], pulsed laser deposition [16], chemical vapor deposition [17], gas-phase condensation [14], sputtering [18] and sol-gel [19] have been used for synthesizing tin oxide powders and films. Among various techniques, processing of the material in a dry and clean gaseous environment has the advantage of minimizing the contamination of the particles.…”