X-ray topography study of monocrystalline silicon wafers diffused with phosphorus by different methods

Vallejo, B.; González‐Mañas, M.; Caballero, M.A.

doi:10.1007/s00339-013-7564-z

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…In that context especially oxidation-induced stacking faults have to be considered, which are known to grow from interfaces between Si and SiO x during oxidation or annealing [16]. That brings particularly the POCl 3 -diffusion step of the solar cell process into the focus of the discussion [17]. But in contrast to the intrinsic stacking faults, which are assumed in this work, stacking faults being induced by oxidation are commonly assigned to the extrinsic fault-type [18].…”

Section: Structural Properties and Formation Of Stacking Faultsmentioning

confidence: 98%

Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells

Naumann

Lausch

Hähnel

et al. 2014

Solar Energy Materials and Solar Cells

292

217

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Section: Structural Properties and Formation Of Stacking Faultsmentioning

confidence: 98%

Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells

Naumann

Lausch

Hähnel

et al. 2014

Solar Energy Materials and Solar Cells

292

217

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“…Severe wafer lifetime degradation has been reported for p-type wafers processed with dopant pastes [124]. X-ray topography studies have also shown that screen-printed dopant pastes create more micro-defects in Si wafers than POCl 3 or phosphoric acid diffusion [125]. Auto-doping and lifetime issues will need to be addressed before such a doping approach can gain any traction in the industry.…”

Section: Dopant Pastementioning

confidence: 99%

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

Davis

Rodgers

Scardera³

et al. 2016

Renewable and Sustainable Energy Reviews

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This article is the second article in a three-part series dedicated to reviewing each process step in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock and wafering, cell fabrication, and module manufacturing. The goal of these papers is to identify relevant metrology techniques that can be utilized to improve the quality and durability of the final product. The focus of this article is on the cell fabrication process. In this review, the fabrication of c-Si PV cells is divided into four steps: (1) wet chemical processes; (2) emitter formation; (3) anti-reflection coating (ARC) and passivation deposition; and (4) metallization. Each of these processing steps can impact the final reliability and durability of PV modules deployed in the field, and here the failure modes and degradation mechanisms induced during cell manufacturing are explored. Additionally, a literature review of relevant measurement techniques aimed at reducing or eliminating the probability of such failures occurring is presented along with an assessment of potential gaps wherein the PV community could benefit from new research and demonstration efforts.

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On the generation of bulk microdefects in phosphorus-diffused monocrystalline silicon solar wafers after a high-thermal treatment studied by X-ray topography

2014

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X-ray topography study of monocrystalline silicon wafers diffused with phosphorus by different methods

Cited by 4 publications

References 19 publications

Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells

Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells

Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing

On the generation of bulk microdefects in phosphorus-diffused monocrystalline silicon solar wafers after a high-thermal treatment studied by X-ray topography

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