Xerographic properties of single- and double-layer photoreceptors based on amorphous selenium-tellurium alloys

Juhasz, C.; Vaezi-Nejad, M.; Kasap, S. O.

doi:10.1007/bf01082147

Cited by 19 publications

(14 citation statements)

References 40 publications

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“…see references in [34,[85][86][87]). Although at room temperature, all measurements indicated non-dispersive hole transport, Pfister was able to show that at low temperatures, the hole transport becomes dispersive.…”

Section: Dispersive Versus Non-dispersive Transportmentioning

confidence: 99%

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Charge transport in pure and stabilized amorphous selenium: re-examination of the density of states distribution in the mobility gap and the role of defects

Kasap

Koughia

Berashevich

et al. 2015

J Mater Sci: Mater Electron

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We re-examine electron and hole transport in pure and stabilized amorphous selenium (a-Se) and attempt to construct a DOS distribution in the mobility gap below E c and above E v based on time-of-flight (TOF) transient photoconductivity measurements. First, we review the current status of a-Se, its recent use in commercial X-ray detectors, and the scientific information that is available in terms of its density of states (DOS). We review and describe a convenient multiple trapping transport mechanism to calculate the TOF transient photocurrents in a system with a distributed DOS in the mobility gap and invoke a number of assumptions that allow the photocurrent to be calculated as an inverse Laplace transform. The assumptions behind the model are critically examined. Then, by comparing the calculated TOF photocurrent shapes directly with experimental waveforms, the DOS distribution has been extracted in a-Se in the vicinity of conduction and valence bands (below E c and above E v ). Below the conduction band, the DOS distribution seems to demonstrate three peaks at around E c -0.30 eV, E c -0.45 eV and below E c -0.55 eV. First principles atomistic modeling provided insight into the origins of these peaks and the peaks have been assigned to certain valence-alteration pairs (VAPs) appearing in different configurations. In contrast to the conduction band vicinity, the DOS distribution above the valence band seems to be almost totally featureless. Within the range of experimental uncertainties, a featureless DOS below E v down to 0.55 eV seems to be able to explain a vast range of data, that is, it can explain hole transport not only as a function of the electric field and temperature down to 123 K, but also the thickness dependence of the mobility over two orders of magnitude. At room temperature, the hole transport is nondispersive but at temperatures below *200 K, it becomes dispersive exactly along the lines argued by Pfister and Scher (Adv Phys 27:747, 1978), and the mobility evinces a clear thickness dependence. The first principles calculations yield two defect levels related to VAP type defects in this region of the mobility gap but the valence band tail is so broad that it masks these peaks. This seeming asymmetry between the conduction and valence bands may be related to their physical origins: the conduction band arises from antibonding states and valence band is due to interacting lone pairs.

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Section: Dispersive Versus Non-dispersive Transportmentioning

confidence: 99%

“…The dependence became insignificant in thick samples ([100 lm). Here we apply this approach to hole transport, and plot the hole drift mobility versus thickness in Figure 9 from Pfister and Scher's data in [44] and from other sources at room temperature [85,87,89]. Drift mobility is operationally defined as…”

Section: Dispersive Versus Non-dispersive Transportmentioning

confidence: 99%

Charge transport in pure and stabilized amorphous selenium: re-examination of the density of states distribution in the mobility gap and the role of defects

Kasap

Koughia

Berashevich

et al. 2015

J Mater Sci: Mater Electron

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“…In recent years, there has been a lot of interest in amorphous selenium-based multilayer photoreceptors for xerography and laser printing [17][18][19][20][21]. In these devices, the photogeneration of charge and subsequent transport of carriers is separated functionally, i.e., these processes occur in different layers.…”

Section: Tof Measurements In Selenium-based Amorphous Multilayer Photmentioning

confidence: 99%

“…Typical information obtained from TOF studies includes carrier mobility and number and/or depth of traps in the photoreceptor. First, the properties of a-Se are well documented [18,20,[22][23][24][25][26][27][28]; as such, it can serve as an ideal test and model material for the comparison of various results on mono-and multilayer structures. In the case of As-Se and Se-Te alloys, the carriers-which were initially localized in a narrow sheet-spread out due to trapping as they traverse across the photoconductor.…”

Section: Tof Measurements In Selenium-based Amorphous Multilayer Photmentioning

confidence: 99%

Time-of-Flight Experiments in Amorphous Chalcogenide Semiconductors

Mikla¹,

Mikla²

2010

Trap Level Spectroscopy in Amorphous Semiconductors

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“…Amorphous Se is of exceptional scientific interest as a good photoconductor, and this property was harnessed to develop the first photocopying machines; recent developments have led to the use of the amorphous Se, stabilized with small amount of As and doped with Cl, in ultrasensitive imaging devices and flat panel X-ray image sensors [6]. Se-Te alloys have also been widely used in photoreceptors [1,[7][8][9]; small additions of Te, up to 20 %, are reported to decrease the electronic bandgap in Se, and the resulting glasses are known to exhibit superior spectral response when used for xenographic applications [7]. Additionally an increase in corrosion resistance and aging in pure selenium glass can be achieved by alloying it with Te [10].…”

Section: Introductionmentioning

confidence: 99%

Study of nucleation in a Se90Te10 chalcogenide glass by microscopy and differential scanning calorimetry

Pillai

Málek

2015

J Mater Sci

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The Se 90 Te 10 alloy readily forms a stable chalcogenide glass that has widely documented applications. In this work, the nucleation behavior of Se 90 Te 10 was studied by infrared microscopy as well as by differential scanning calorimetry. Nuclei densities were directly estimated by image analysis of micrographs of samples following nucleation-development heat treatments, and they were subsequently compared with indirect quantitative estimation by DSC. Both the methods yielded comparable results in the non-intersecting region of the nucleationgrowth curves while diverging in the nucleation-growth domain. The rates of nucleation could be adequately described by the classical nucleation theory.

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Xerographic properties of single- and double-layer photoreceptors based on amorphous selenium-tellurium alloys

Cited by 19 publications

References 40 publications

Charge transport in pure and stabilized amorphous selenium: re-examination of the density of states distribution in the mobility gap and the role of defects

Charge transport in pure and stabilized amorphous selenium: re-examination of the density of states distribution in the mobility gap and the role of defects

Time-of-Flight Experiments in Amorphous Chalcogenide Semiconductors

Study of nucleation in a Se90Te10 chalcogenide glass by microscopy and differential scanning calorimetry

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