Argon (Ar) and oxygen (O 2 ) plasmas are performed on silicone adhesives to eliminate the negative influence of silicone on amorphous silicon (a-Si:H) surface passivation of wafers bonded to glass. Both the Ar and O 2 plasmas lead to oxidation of the silicone surface, consisting in an increase of oxygen/ carbon ratio, of degree of crosslinking, and of material density. The oxidized silicone is more resilient than pristine and does not interact with the a-Si:H passivation process, allowing for state-of-the-art surface passivation of wafers bonded to glass.