XPS analysis with an ultra clean vacuum substrate carrier for oxidation and airborne molecular contamination prevention

Pelissier, B.; Kambara, H.; Godot, E.; Veran, E.; Loup, V.; Joubert, O.

doi:10.1016/j.mee.2007.04.149

Cited by 31 publications

(13 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As expected the Ge 2p3 / 2 signal shows two binding energy contributions at 1218.5 and 1221.0 ͑+ / −0.2͒ eV. 9 These can be assigned to zero-valent and quadravalent germanium, respectively. Zerovalent corresponds to bulk Ge while quadravalent indicates the presence of GeO 2 .…”

supporting

confidence: 67%

Low temperature germanium to silicon direct wafer bonding using free radical exposure

Byun

Ferain

Fleming

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated by in situ radical activation bonding in vacuum. In order to gain further insight into the bonding mechanism, the Ge surface chemistry after either oxygen or nitrogen radical activation was analyzed by means of angle-resolved x-ray photoelectron spectroscopy. After low temperature direct bonding of Ge to Si followed by annealing at 200 and 300 degrees C, advanced imaging techniques were used to characterize the bonded interface. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3360201

show abstract

supporting

confidence: 67%

Low temperature germanium to silicon direct wafer bonding using free radical exposure

Byun

Ferain

Fleming

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…11 To understand well the demolding process and the interactions which occur between our antisticking layers and resists, we investigated the interface energy between them using the crack-opening method proposed by Maszara et al 12 A y-thick blade was inserted between the two wafers of a bonded stack; the two wafers were bent around the insert region and a crack was generated ͑Fig. The XPS tool was a Thermo Electron Theta 300 ® spectrometer.…”

Section: B Release-properties Characterizationmentioning

confidence: 99%

Improved release strategy for UV nanoimprint lithography

Garidel

Zelsmann

Chaix

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Effect of fluoroalkyl substituents on the reactions of alkylchlorosilanes with mold surfaces for nanoimprint lithography J.The adhesion between the fused silica mold and the resist remains a key issue in ultraviolet nanoimprint lithography ͑UV-NIL͒, especially in step and repeat processes. In this paper, we present results on antisticking layers ͑ASLs͒ of tridecafluoro-1,1,2,2-tetrahydrooctyltrichlorosilane ͑F 13 -TCS͒ deposited in vapor phase and of a commercial product, Optool DSX™, from Daikin Chemical, deposited in liquid phase. The antisticking properties and structural morphologies of the formed self-assembled monolayer are investigated using contact angle, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy ͑XPS͒ measurements. Obtained surface energies are as low as 10 mN/ m for both types of ASL. The stability of these formed layers during the UV-NIL process remains the main important issue. It was tested on an EVG ® step and repeat UV-NIL equipment using acrylate-based resists. After only 50 prints, we observed a high increase in the surface energy of the mold, which indicates a drastic degradation of the antisticking ͑ASL͒. XPS measurements show that fluorine is removed from the mold surface. This surface modification is attributed to free radicals created during the UV cure of the resist that easily cleaved fluorocarbon chains. This can be confirmed by the fact that the polar component of the surface energy was increased by a larger factor than the dispersive one. To overcome this problem, the acrylate-based resist was modified by the adjunction of a fluorine surfactant. To go further in the mold/resist interaction, we developed an original setup that directly measures the adhesion force. Almost no degradation of the organic ASL was observed in terms of surface energy and fluorine density after more than 50 prints when using a sufficiently high amount of surfactant in the resist.

show abstract

“…The Ge 2p electronic level shows Ge−Ge and Ge−O contributions at 1218 and 1221.5 eV, respectively . An interesting point to note here is that the 1221.5 eV peak corresponds to a completely oxidized Germanium state with no significant suboxide. The presence of the Ge−Ge and Si−Si peaks shows that the Ge structure of the nanopillar is still present after the etching whereas the Ge−O and Si−O contribution is very likely due to the passivation layer on the sidewall.…”

Section: Resultsmentioning

confidence: 89%

Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates

et al. 2008

View full text Add to dashboard Cite

We present a method to obtain a dense array of well-organized SiGe quantum dots in Si nanopillars on a large substrate area by using a PS-b-PMMA block copolymer template. First, the 2D order of the template is evaluated using a pair correlation function and a bond-orientational correlation function. It is shown that the holes contained in the polystyrene template form a structure presenting a hexatic order. This template is then used to fabricate the nanopillars using the following method: in a first step, the copolymer template serves as a deposition mask to fabricate a hexagonal array of Pt dots. In a second step, the Pt dot pattern is transferred to an alternation of Si and SiGe layers on a silicon substrate with an anisotropically etching using Cl 2 /O 2 plasma.

show abstract

XPS analysis with an ultra clean vacuum substrate carrier for oxidation and airborne molecular contamination prevention

Cited by 31 publications

References 11 publications

Low temperature germanium to silicon direct wafer bonding using free radical exposure

Low temperature germanium to silicon direct wafer bonding using free radical exposure

Improved release strategy for UV nanoimprint lithography

Fabrication of Well-Organized and Densely Packed Si Nanopillars Containing SiGe Nanodots by Using Block Copolymer Templates

Contact Info

Product

Resources

About