XPS investigation on vacuum thermal desorption of UV/ozone treated GaAs(100) surfaces

Cossu, Gian Matteo; Ingo, G. M.; Mattogno, G.; Padeletti, G.; Proietti, G.M.

doi:10.1016/0169-4332(92)90219-n

Cited by 94 publications

(60 citation statements)

References 20 publications

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“…New 3d 3/2 and 3d 5/2 peaks appeared, consistent with formation of thin As oxides and nitrides. 23 The contribution due to the As oxide increased with increasing angle with respect to the surface which suggests that the As oxide was near the sample surface. No changes in the Ga spectra were observed during plasma treatment for long times.…”

Section: Resultsmentioning

confidence: 97%

Plasma nitridation of thin Si layers for GaAs dielectrics

Wang

Diatezua

Park

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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10–30 Å thick Si interface control layers (ICL) were deposited on GaAs epitaxial layers on GaAs substrates. These were then nitrided by exposure to an electron cyclotron resonance nitrogen plasma for varying times. The nitride thickness is shown to increase logarithmically with time. A model based on electron tunneling is proposed to explain the results. Capacitance–voltage measurements on resulting dielectric layers showed that, under optimal conditions, results adequate to fabrication of high-performance field-effect transistors are possible. The ICL thickness cannot be reduced to zero by nitridation because of damage to the underlying GaAs.

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Section: Resultsmentioning

confidence: 97%

Plasma nitridation of thin Si layers for GaAs dielectrics

Wang

Diatezua

Park

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Figure 3 shows the Ga 2p 3/2 peak for the three concentrations of Ga. Each peak can be decomposed into two contributions which are fitted by Gaussian functions. The prominent one, centered at 1118.9 ± 0.2 eV, is attributed to Ga 3+ ions bound to O [30,31,32]. These ions may be in substitution of Zn 2+ in the wurtzite ZnO structure.…”

Section: Page 5 Of 18 Nanoscalementioning

confidence: 95%

Tunable mid IR plasmon in GZO nanocrystals

et al. 2015

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Degenerate metal oxide nanoparticles are promising systems to expand the significant achievements of plasmonics into the infrared (IR) range. Among the possible candidates, Ga-doped ZnO nanocrystals are particularly suited for mid IR, considering their wide range of possible doping levels and thus of plasmon tuning. In the present work, we report on the tunable mid IR plasmon induced in degenerate Ga-doped ZnO nanocrystals. The nanocrystals are produced by a plasma expansion and exhibit unprotected surfaces. Tuning the Ga concentration allows tuning the localized surface plasmon resonance. Moreover, the plasmon resonance is characterized by a large damping. By comparing the plasmon of nanocrystal assemblies to that of nanoparticles dispersed in an alumina matrix, we investigate the possible origins of such damping. We demonstrate that it partially results from the self-organization of the naked particles and also from intrinsic inhomogeneity of dopants.

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“…X-ray photoelectron spectroscopy quantitative analysis and element atomic ratios were determined, for each test, in terms of the most intense core-level peak areas after smoothing and subtraction of the x-ray satellite structure and 'S'-type integral background profile, corrected for Scofield's photoionization cross-sections, 11 whose validity has been demonstrated in previous works. 10 The error associated with the quantitative analysis is estimated to be ¾5% of the measured atomic percentage, as already tested in previous work.…”

Section: Methodsmentioning

confidence: 99%

“…In the curve-fitting procedure, we have used the FWHMs and Gaussian-Lorentian ratio obtained from an ultrahigh vacuum (UHV)-cleaved GaAs(001) sample, 10 because for a ternary system a single crystal of Ga 0.73 In 0.27 As to cleave under vacuum was not available, and to the best of our knowledge these data for the ternary system are not available in the literature. Anyway, we point out that the UHV-cleaved GaAs(001) sample and the Ga 0.73 In 0.27 As sample subjected to 1 keV Ar C ion sputtering have the same FWHMs for Ga 3d,…”

Section: Methodsmentioning

confidence: 99%