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This paper presents the detailed simulation of a double-pixel structure for charged particle detection based on the 3D-trench silicon sensor developed for the TIMESPOT project and a comparison of the simulation results with measurements performed at the π-M1 beam at PSI laboratory. The simulation is based on the combined use of several software tools (TCAD, GEANT4, TCoDe and TFBoost) which allow to fully design and simulate the device physics response in very short computational time, O(1–100 s) per simulated signal, by exploiting parallel computation using single or multi-thread processors. This allowed to produce large samples of simulated signals, perform detailed studies of the sensor characteristics and make precise comparisons with experimental results.

In this paper the results of a beam test characterization campaign of 3D trench silicon pixel sensors are presented. A time resolution in the order of 10 ps was measured both for non-irradiated and irradiated sensors up to a fluence of 2.5 × 1016 1 MeV neq cm−2. This feature and a detection efficiency close to 99% make this sensors one of the best candidates for 4D tracking detectors in High-Energy-Physics experiments.

Particle tracking for future experiments at colliders is an incredible challenge in terms of sensor technology and readout. Simulation tools are a crucial ingredient to investigate new layouts able to cope with harsh radiation conditions and, at the same time, provide valuable timing information for track finding algorithms. Detailed and numerous simulations of energy deposits as well as sensor and front-end electronics responses imply a heavy usage of computing resources. In this paper, we present two software packages that, via massive parallelization and dedicated algorithms, allow for a significant speed-up in simulation time.

A comparison among O/Cr atomic ratio! obtained from XPS Cr 2p3,, and 0 1s spectra in pure inorganic compounds, employing the Elemental Sensitivity Factors approach and the so-called 'First-Principles Model' is reported.