XPS study of the nitrides, oxides and oxynitrides of titanium

Kuznetsov, M. V.; Zhuravlev, Ju.F.; Zhilyaev, V. A.; Gubanov, V. A.

doi:10.1016/0368-2048(92)80001-o

Cited by 88 publications

(52 citation statements)

References 4 publications

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“…The other rings could be attributed to higher order reflections of TiN. Figure 4c displays a planar view of the films, which reveals granular nanocrystals with [20][21][22] which is consistent with these reported for TiN films which often exhibit oxygen incorporation. 23 The relative intensities of the Ti-O bonding increased significantly as the air/Ar ratio reached 0.40, indicating that the films transformed from TiN into TiN x O y .…”

Section: Resultssupporting

confidence: 84%

Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

Chan

2011

J. Electrochem. Soc.

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Conductive nitride films are conventionally prepared by reactive sputtering using nitrogen as a reactive gas. Replacing nitrogen with air as a reactive gas allows the process to be conducted at high base pressures, i.e., low vacuum, which can reduce substantially the processing time. In this study, TiN films were selected as a model system for the investigation. As the air/Ar flow ratio reached 0.10-0.15, the films revealed the characteristic rock-salt structured TiN. The N/Ti of the films was 0.80-0.83 with 9-13 atom % of oxygen. The determined resistivities and hardnesses of the films were in the range of 110-130 lX_cm and 26-27 GPa, respectively. All obtained data fulfill the characteristics of TiN films. Kinetic formation apparently prevails over thermodynamic predictions at low air/Ar ratios. In such plasma, the dissociation energy of nitrogen is much smaller than that of oxygen, leading to the high impingement rate of nitrogen. The dissolution of oxygen in the TiN films seems also to stabilize the nitride structure

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Section: Resultssupporting

confidence: 84%

Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

Chan

2011

J. Electrochem. Soc.

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“…For N-doped TiO 2 , N1s appeared at 399.0 eV ( Figure 11 and Table 3), which may be ascribed to N-doped TiO 2 . 56,57 Low intensity precluded reliable assignment of the peak at 399.0 eV (only 0.41%, Table 3), which, however, can be attributed to a number of Ti-N bonding environments, such as formation of O-Ti-N (substitutional N) and TiO-N (interstitial N) structures, 56 and/or to traces of surfacechemisorbed ammonium 58 residual from sol-gel synthesis. BET surface areas (S BET ), pore volumes (V p ) and pore diameters (D p ) are shown in Table 4.…”

Section: Characterization Resultsmentioning

confidence: 99%

Synthesis, Characterization, and Photocatalytic Activity of Pure and N-, B-, or Ag- Doped TiO2

Bezerra¹,

Cavalcante²,

Garcia³

et al. 2017

J. Braz. Chem. Soc.

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This article reports the synthesis and characterization of pure and N-, B-, and Ag-doped TiO 2 and the ability of these oxides to photodegrade methylene blue (MB) under sunlight or UV-ABC radiation. The compounds were synthesized using the sol-gel method and characterized by scanning electron microscopy, X-ray diffraction, diffuse reflectance spectroscopy, Fourier transform infrared spectroscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. Photocatalytic efficiency was significantly increased by N-doping, resulting in 98% MB decomposition under UV-ABC irradiation for 180 min. Ag-and B-doped TiO 2 lowered MB degradation rates to 52 and 73%, respectively, compared with pure TiO 2 . The same behavior was observed with exposure to UV-Vis, with 88, 65, 60, and 42% MB removal with N-doped, pure, B-doped, and Ag-doped TiO 2 , respectively. Under visible light alone, N-doped TiO 2 exhibited higher photocatalytic efficiency than commercial P25-type TiO 2 . Photocatalysis with N-doped TiO 2 proved to be a promising alternative for MB degradation, given the potential of employing solar energy, thus minimizing operating costs.

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“…with a contribution of metallic titanium, as evidenced by the Finally, the spectrum recorded on the ion implanted substrate (curve (c)) shows the occurrence of a main asymmetric peak, ascribable to titanium The presence of a minor contribution to this peak, attributable to titanium suboxides or oxynitrides, can not be excluded, due to the residual oxygen content detected (see table). 8 , 9 As far as A1 2p and V 2p spectra are concerned, the relative energy positions indicate that in sample (a) the main peaks are to be attributed to the oxidized accompanied by a small amount of the metallic species, as evidenced by the shoulder at lower binding energy. In sample (b), metallic aluminium and vanadium become prominent, whereas the oxidized phases are strongly reduced.…”

Section: Resultsmentioning

confidence: 98%

XPS and AES study of Al₂O₃/Ti6Al4V interface: Influence of oxidation and nitruration of the metal surface

Delogu¹,

Dikonimos-Makris²,

Giorgi³

et al. 1994

Surface & Interface Analysis

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Important properties of the coating/substrate combination like hardness, stress and, in particular, adhesion rely partly on the morphology and microstructure of the interface, which is often physically and chemically different from the substrate as well as from the coating.The aim of this work is to study the influence of the chemical state of the metal surface on the structure of the interface AI2O,/Ti6A14V, obtained by deposition via sputtering of the ceramic.For this purpose three different surface treatments of the substrate were performed: air oxidation, cleaning by Ar+ sputtering and nitrogen ion implantation.The chemical composition of the treated surfaces was assessed by x-ray photoelectron spectroscopy, while the composition of the interfaces was investigated by Auger electron spectroscopy depth profiling.

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XPS study of the nitrides, oxides and oxynitrides of titanium

Cited by 88 publications

References 4 publications

Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

Synthesis, Characterization, and Photocatalytic Activity of Pure and N-, B-, or Ag- Doped TiO2

XPS and AES study of Al₂O₃/Ti6Al4V interface: Influence of oxidation and nitruration of the metal surface

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XPS study of the nitrides, oxides and oxynitrides of titanium

Cited by 88 publications

References 4 publications

Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

Air-Based Deposition of Conductive Nitride Thin Films by Sputtering

Synthesis, Characterization, and Photocatalytic Activity of Pure and N-, B-, or Ag- Doped TiO2

XPS and AES study of Al2O3/Ti6Al4V interface: Influence of oxidation and nitruration of the metal surface

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XPS and AES study of Al₂O₃/Ti6Al4V interface: Influence of oxidation and nitruration of the metal surface