XPS study on dry etching of Si/GexSi1−x

Drift, E. van der; Zijlstra, T.; Fakkeldij, E. J. M.; Cheung, Rebecca; Werner, K.; Radelaar, S.

doi:10.1016/0167-9317(94)00150-s

Cited by 9 publications

(3 citation statements)

References 10 publications

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“…The O/F is approximately an order of magnitude larger than observed for SiGe etched in the same plasma. 13 In first approach one would expect a trend the other way around since WF x etch products are far less volatile than SiF x species. 14 At Ϫ10°C both the fluorine and oxygen components in the reaction layer are getting stronger compared to ϩ30°C, as can be inferred from the ratios values in columns 1-3.…”

Section: Resultsmentioning

confidence: 99%

Interactive effects in reactive ion etching of W1−xGex

Drift

Dinh

Verhoeven

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inSingle-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation Reactive ion etching characteristics of chemical vapor deposition-deposited W 1Ϫx Ge x alloys in Cl 2 , SF 6 , and SF 6 /O 2 /He plasmas were investigated. The interactive role of the germanium component in the overall etch process was unraveled. To this aim etch rates were studied as a function of the Ge content and at different temperatures. Etched profiles give useful additional information about the nature of the etch mechanism. The underlying surface reactions were more quantitatively identified by x-ray photoelectron spectroscopy on dry etched surfaces.

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Section: Resultsmentioning

confidence: 99%

Interactive effects in reactive ion etching of W1−xGex

Drift

Dinh

Verhoeven

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

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“…The EDX mapping of NW and NS, presented for large NS in figure 6(d), shows the oxide to be a pure SiO 2 layer, with however a few nm of GeO 2 on its surface. The Germanium oxide is likely a remnant of the native SiGeO x layer or a pure GeO 2 layer formed because of Ge surface enrichment during plasma etching [32] facilitating the interaction of highly reactive Ge surface atoms with oxygen [33] without the formation of SiO 2 . We do not observe any transformation of GeO 2 into SiO 2 which would result to the presence of metallic Ge as reported in [11].…”

Section: Ge-dependent Oxidation Behavior In Nanostructuresmentioning

confidence: 99%

Engineering of dense arrays of Vertical Si_1-xGe _x nanostructures

et al. 2022

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Vertical nanostructure technologies are becoming more important for the down scaling of nanoelectronic devices such as logic transistors or memories. Such devices require dense vertical nanostructured channel arrays (VNCA) that can be fabricated through a top-down approach based on group IV materials. We present progresses on the top-down fabrication of highly anisotropic and ultra-dense Si1-xGex (x = 0, 0.2, 0.5) VNCAs. Dense nanowire and nanosheet patterns were optimized through high resolution lithography and transferred onto Si1-xGex substrates by anisotropic reactive ion etching with a fluorine chemistry. The right gas mixtures for a given Ge content resulted in perfectly vertical and dense arrays. Finally we fabricated oxide shell/SiGe core heterostructures by dry- and wet-thermal oxidation and evaluated their applicability for nanostructure size engineering, as already established for silicon nanowires. The impact of the nanostructured shape (wire or sheet), size and Ge content on the oxide growth were investigated and analysed in detail through transmission electron microscopy.

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“…Molecular fragments that are ejected from the bottom of the patterns either dissipate into the plasma or collide with the walls of the pattern and redeposit there [36]. With SF 6 /O 2 etching plasmas, the products found on the sidewall have the composition SiO x F y [37][38][39]. The redeposition of the sputtered fragments is critical for the sidewall passivation that leads to the anisotropic etch and vertical features [37,40,41].…”

Section: Mechanism Of the Solid-solid Transformation Of Silver Nanopa...mentioning

confidence: 99%

A unique solid–solid transformation of silver nanoparticles on reactive ion-etching-processed silicon

Lee¹,

Rabin²

2012

Nanotechnology

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Processes that combine nanoparticle suspensions with micromechanical or microelectronics platforms can reveal new phenomena unique to nanoscale objects. We report that silver nanoparticles react with silicon wafers that have been patterned by reactive ion etching (RIE) in SF(6)/O(2) plasma. This reaction results in the localized deposition of silver on the patterns. Through the modification of the reaction conditions, the reaction mechanism was explored. Redeposition of the sputtered RIE products is suggested as the key to this transformation. The new silver deposition process was utilized to localize the growth of gold nanoparticles and silicon nanowires on the vertical sidewalls of patterns in silicon, demonstrating a simple route to the fabrication of overhanging nanoscale objects.

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XPS study on dry etching of Si/GexSi1−x

Cited by 9 publications

References 10 publications

Interactive effects in reactive ion etching of W1−xGex

Interactive effects in reactive ion etching of W1−xGex

Engineering of dense arrays of Vertical Si_1-xGe _x nanostructures

A unique solid–solid transformation of silver nanoparticles on reactive ion-etching-processed silicon

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XPS study on dry etching of Si/GexSi1−x

Cited by 9 publications

References 10 publications

Interactive effects in reactive ion etching of W1−xGex

Interactive effects in reactive ion etching of W1−xGex

Engineering of dense arrays of Vertical Si1-x Ge x nanostructures

A unique solid–solid transformation of silver nanoparticles on reactive ion-etching-processed silicon

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Product

Resources

About

Engineering of dense arrays of Vertical Si_1-xGe _x nanostructures