1991
DOI: 10.1016/0169-4332(91)90400-e
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XPS study on the dispersion of carbon additives in silicon carbide powders

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Cited by 169 publications
(63 citation statements)
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“…After PLL-g-PEG adsorption there is good agreement with the values of Huang et al [33] (referred to C1s at 284.6 eV). The O1s-Si peak overlaps with the NHC=O, [39]. However, slight discrepancies exist between the present analysis with those of Contarini, including a slightly higher value (285.6 eV) for the C-C/C-H components of the C1s signal than Contarini (285 eV), as well as a slightly higher O1s signal corresponding to the O-Si bond (533 eV compared to 532.3 eV).…”
Section: Xpscontrasting
confidence: 48%
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“…After PLL-g-PEG adsorption there is good agreement with the values of Huang et al [33] (referred to C1s at 284.6 eV). The O1s-Si peak overlaps with the NHC=O, [39]. However, slight discrepancies exist between the present analysis with those of Contarini, including a slightly higher value (285.6 eV) for the C-C/C-H components of the C1s signal than Contarini (285 eV), as well as a slightly higher O1s signal corresponding to the O-Si bond (533 eV compared to 532.3 eV).…”
Section: Xpscontrasting
confidence: 48%
“…The C-Si component of the C1s peak shows a slight shift to 283.2 ± 0.03 eV. The C-C/C-H component is found at 285.6 ± 0.05 eV, which is 0.6 eV higher than the bare SiC value reported by Contarini et al [39] or the theoretical PLL-g-PEG value reported by Huang et al [33], and is shifted by about 1.6 eV from the value measured on bare SiC. Additionally, a C-O/C-N component at 287.2 ± 0.05 eV is shifted 1.4 eV from the measurement on bare SiC, and is around 0.7 eV higher than the theoretical value of the C-O component for PLL-g-PEG.…”
Section: Xpsmentioning
confidence: 44%
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“…19,20 The overall intensity of the C 1s emission increased after the 530°C annealing step, presumably due to an insufficient outgassing of the heating stage prior to the experiment. The shape of the C 1s emission after the 530°C anneal was similar to the shape of the C 1s signal observed for the CH 3 -Si(111) surface after a 530°C anneal, indicating that a similar decomposition reaction product formed at this temperature in both cases.…”
Section: Surface Symmetry Of C 2 H 5 -Functionalized Si(111)mentioning
confidence: 99%
“…This shift was consistent with that observed by other groups. [34][35][36] Moreover, the shift of Ti (2p) binding energy in PIS6-10-4T at various depths was less significant than that in PIS0-00-4T.…”
Section: Xpsmentioning
confidence: 53%