XTEM characterization of tungsten implanted SiC thin films on silicon for field emission devices

Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films

“…8 In general, a qualified material used as FE emitter should be made of highly conductive film with high mechanical strength, high emission site density, high thermal conductivity, and low FE threshold fields. Though researchers are still actively looking for alternative materials, diamonds, 1 diamond-like carbon, 2,3 amorphous carbon, 4,5 carbon nanotubes (CNTs), 6,7 etc., have been widely studied as possible candidates for FE emitters.…”

“…8 In general, a qualified material used as FE emitter should be made of highly conductive film with high mechanical strength, high emission site density, high thermal conductivity, and low FE threshold fields. 8,15 In this letter, we report on the growth of tungsten carbide nanowires by a simple thermal annealing of sputterdeposited WC x films. [11][12][13][14] It is expected that the growth of nanosized structures from RMC films, if possible, would be beneficial to the improvement of electron FE properties for actual device performance.…”

Ion Beam Synthesis Of Metal - Silicon Carbide - Si Multilayer Structures

“…W ions were MEVVA implanted at 70 kV into amorphous carbon-rich silicon carbide layers [11], which were formed by a two-step 35 keV C + implantation without subsequent thermal annealing. Implantation temperatures of 170°C were reached by beam heating, and a subsequent rapid thermal annealing was performed for 1 min.…”

“…While in the examples given above cavity formation occours during implantation into crystalline layer strucutres, it can be shown that it may occur also during annealing of metal implanted amorphous (a-) SiC films on silicon. The implantation of W + ions under conditions as compiled in table 1 into ~150 nm thick carbon-rich a-SiC films on Si, formed by implantation of 35 keV C + ions at 8-10 x 10 17 C/cm 2 into Si(100) in two steps [11], results in the formation of amorphous W nanoclusters, which according to XPS measurements are fairly unreacted. W particles are located in the upper half of the amorphous carbide layer.…”

“…W particles are located in the upper half of the amorphous carbide layer. Rapid thermal annealing for 1 min at 1050°C causes the lower part of the amorphous layer to crystallize into nanocrystalline 3C-SiC (4 nm grains), while in the upper part mainly WC is formed (for details of this layer structure and their promising field emitter properties see [11]). At the lower SiC/Si interface, tetragonal WSi 2 precipitates are formed (Fig.…”