Formation of SiC Thin Films by Ion Beam Synthesis

Lindner, J.K.N.

doi:10.1007/978-3-642-18870-1_11

Cited by 3 publications

(3 citation statements)

References 80 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An alternative technique to realize MEMS or NEMS structures is ion beam synthesis [398]. It is based on ion implantation of stoichiometric or substoichiometric doses of carbon into Si substrates at an elevated temperature followed by a long term high-temperature annealing.…”

Section: 35mentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

View full text Add to dashboard Cite

With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

show abstract

Section: 35mentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

View full text Add to dashboard Cite

show abstract

“…The silicon detector was an Ortec (A series) partially depleted silicon surface barrier with 25 mm 2 surface area, biased at 50 V, with 100 μm active depth [6]. Its reverse current was about 10-20 nA.…”

Section: Jinst 19 P04032mentioning

confidence: 99%

“…Our research group has already carried out studies using SiC detectors with a surface area from 2 mm 2 up to 9 mm 2 , with a maximum depletion depth of 80 microns and with different surface metallization. They have been used to detect various types of ions, both low and high energy, from about 10 keV to about 10 MeV, as reported in the literature [3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Comparison between conventional Si and new generation of SiC detector for high proton energy spectrometry

Torrisi,

Havranek,

Mackova

et al. 2024

J. Inst.

View full text Add to dashboard Cite

A SiC Schottky diode and a Si surface barrier detector have been compared during Rutherford backscattering spectrometry (RBS) using 2–3 MeV proton beams. Both detectors are suited to detect high energetic ions with high-energy resolution for spectroscopic analysis. The correlations between the detector parameters and the surface passivating layers, ion energy and current dependence, ion penetration depth, detection efficiency and energy resolution, are outlined. Comparative RBS analysis performed using SiC and Si detectors has been investigated to highlight the advantages and disadvantages of the use of SiC with respect to the traditional Si junction detector. RBS spectrometry has been carried out using projectiles of proton incident on different targets to analyse their composition and thickness by the detection of the backscattered ions revealed by Si and SiC detectors.

show abstract