XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209 Bi ions irradiation

Yang, Zhimei; Li, Yun; Ma, Yao; Gong, Ming; Huang, Mingmin; Gao, Bo; Lai, Li

doi:10.1016/j.nimb.2017.07.030

Nuclear Instruments and Methods in Physics Research Section B:

2017

DOI: 10.1016/j.nimb.2017.07.030

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XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209 Bi ions irradiation

Zhimei Yang

Yun Li

Yao Ma

et al.

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Cited by 8 publications

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XTEM investigation of recovery on electrical degradation of 4H-SiC Schottky barrier diode by swift heavy 209 Bi ions irradiation

Cited by 8 publications

References 19 publications

The radiation effects on 4H–SiC epilayers using different electron radiation methods

The radiation effects on 4H–SiC epilayers using different electron radiation methods

Influence of annealing treatment on performance of 4H–SiC SBD irradiated by heavy ions under room temperature and low temperature

Electrical characterization and temperature reliability of 4H-SiC Schottky barrier diodes after Electron radiation

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