XTEM Studies of Nickel Silicide Growth on Si(100) Using a Ni/Ti Bilayer System

Falke, U.; Fenske, F.; Schulze, Steffen; Hietschold, Michael

doi:10.1002/1521-396x(199708)162:2<615::aid-pssa615>3.0.co;2-q

Cited by 24 publications

(18 citation statements)

References 11 publications

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“…[7][8][9][10]16 Thus, nonequilibrium phases at different stages, such as those described later, may form and be metastably retained at room temperature. By heating quickly to 900°C, a temperature at which NiSi is not stable, NiSi 2 is free to nucleate at random locations on a clean Ni/Si interface and grow by fast Ni diffusion through the NiSi 2 lattice via a vacancy mechanism.…”

Section: Ni/si Solid-state Reactionmentioning

confidence: 91%

“…This phenomenon has also been observed previously. 18,21 Note that the trapezoidal crystals with (100) facets are not slices from sidewalls of larger pyramids created by sample cutting, which would otherwise have weak-contrast (100)-like surfaces, as seen by Falke et al 7 When Ni reacts with Si to form NiSi 2 , there exists a relationship regarding the thickness for each layer: 1 nm Ni ϩ 3.63 nm Si 3.59 nm NiSi 2 . 22 In our case, NiSi 2 would at least reach a thickness of 540 nm if all 150-nm deposited Ni were totally consumed because of the reaction with Si.…”

Section: Ni/si Solid-state Reactionmentioning

confidence: 99%

“…Similar results have been observed previously. 7 Notice that Si diffraction spots turn to streaks perpendicular to the interface because of the shape effects, i.e., the relaxation of the third Laue condition produced by the abrupt truncation of the Si lattice. 15 The faint, roughly hexagonal, pattern of regular spots and the long vertical streak are artifacts of the CCD camera that were incompletely subtracted from the image and should be ignored.…”

Section: Ni/si Solid-state Reactionmentioning

confidence: 99%

“…[7][8][9][10] In the ternary Ni/Si 1-x Ge x system, the phase reactions and morphological transformations are still more complicated. Island structures and Ge segregation have been observed following high-temperature annealing treatments.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1−xGex

Chen

Shi

Banerjee

et al. 2003

Journal of Elec Materi

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Section: Ni/si Solid-state Reactionmentioning

confidence: 91%

Section: Ni/si Solid-state Reactionmentioning

confidence: 99%

Section: Ni/si Solid-state Reactionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1−xGex

Chen

Shi

Banerjee

et al. 2003

Journal of Elec Materi

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“…Several papers have discussed the interfacial interaction for the Ti or Ni monolayer and Ti/Ni or Ni/Ti bilayers on Si substrates (Horache et al 1989, Setton et al 1989, Sieber et al 1991, Falke et al 1997, but this is indeed diOE erent from the TiNi/ Si-substrate case. To the best of our knowledge, only two studies have been reported which are related to the TiNi/Si-substrate system (Hung andMayer 1986, Stemmer et al 1997).…”

mentioning

confidence: 99%

Interfacial microstructures of rf-sputtered TiNi shape memory alloy thin films on (100) silicon

Wu¹

2001

Philosophical Magazine A

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Interfacial microstructures of TiNi thin ®lms rf sputtered on to Si(100) and post-annealed at 400±7008C for 30 mins have been investigated using analytical and high-resolution transmission electron microscopy. For annealing temperatures below 6008C, a very thin amorphous (Si, O)-rich layer is observed at the interface. Ni atoms are the primary diOE using species and NiSi2 forms triangularly and epitaxially towards the Si substrate. TiNi ®lms initially crystallize after 30 min at 5008C. Si and Ti atoms begin to migrate in specimens annealed at 6008C for 30 min. At this temperature, a near-Ti 4 Ni 4 Si 7 phase in triangular NiSi2 and a near-TiNiSi phase in the TiNi ®lm are simultaneously nucleated and grown at the interface. For the specimens annealed at 7008C for 30 min, two layers of Ti4Ni4Si7 and TiNiSi form at the interface with the sequence TiNi/TiNiSi/Ti 4 Ni 4 Si 7= Si. Triangular NiSi 2 islands are now embedded in the Ti4Ni4Si7 layer. A mechanism of interfacial microstructure evolution is proposed to explain the temperature eOE ect on the interfacial reaction layers between the TiNi ®lm and the Si(100).

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Low‐Temperature Formation of NiSi₂ Phase in Ni/Si System

Noya

Takeyama

2016

Elect Comm in Japan

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The silicide phase formation is examined in the Ni/Si system. The multiphase of NiSi and NiSi 2 is confirmed in a specimen, in which a 30-mm-thick Ni film is sputterdeposited on Si(100) at 350°C and subsequently annealed at 400°C for 1 h. This is interpreted that the NiSi and NiSi 2 phases nucleate from the amorphous alloys, as a supercooled melt, at a composition corresponding to those of eutectic points in different composition, which appear in the intermixed Ni-Si alloy layer with a Ni concentration gradient owing to intermixing between Ni and Si at the interface. To confirm this idea, we performed Ni deposition on a 350°C -heated Si substrate with a thin SiO 2 layer. The results show the direct formation of NiSi 2 in a nonuniform fashion. This is because the thin SiO 2 layer suppresses Ni diffusion into Si, resulting in the formation of a Ni-Si alloy with a Si-rich composition, from which NiSi 2 nucleates at a low temperature. We can demonstrate that the high-temperature phase of NiSi 2 nucleates under kinetic constraints from an amorphous alloy with a suitable composition. C⃝ 2016 Wiley Periodicals, Inc. Electron Comm Jpn, 99(9): 85-91, 2016; Published online in Wiley Online Library (wileyonlinelibrary.com).

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XTEM Studies of Nickel Silicide Growth on Si(100) Using a Ni/Ti Bilayer System

Cited by 24 publications

References 11 publications

High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1−xGex

High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1−xGex

Interfacial microstructures of rf-sputtered TiNi shape memory alloy thin films on (100) silicon

Low‐Temperature Formation of NiSi₂ Phase in Ni/Si System

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XTEM Studies of Nickel Silicide Growth on Si(100) Using a Ni/Ti Bilayer System

Cited by 24 publications

References 11 publications

High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1−xGex

High-resolution transmission electron microscopy of silicide formation and morphology development of Ni/Si and Ni/Si1−xGex

Interfacial microstructures of rf-sputtered TiNi shape memory alloy thin films on (100) silicon

Low‐Temperature Formation of NiSi2 Phase in Ni/Si System

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Low‐Temperature Formation of NiSi₂ Phase in Ni/Si System