Y₂O₃-Stabilized ZrO₂ Thin Films Prepared by Metalorganic Chemical Vapor Deposition

Abstract

Zirconia films stabilized by Y2O3 were deposited by metal-organic chemical vapor techniques onto various crystalline substrates. Y2O3, ZrO2 and mixtures of these two were deposited and characterized. The deposition rate, the film composition and the structure could be systematically varied through the Y(C11H19O2)3, Zr(O·t-C4H9)4 and O2 source gas ratios and the substrate temperature. The Y/Zr ratio could be adjusted by controlling the ratio in Y(C11H19O2)3 to Zr(O·t-C4H9)4 partial pressures. However, the Y/Zr ratio was found to be smaller than that estimated based on the deposition rates of unmixed Y2O3 and ZrO2 films. The activation energy of the Y2O3 component in YSZ film growth was similar to that of the ZrO2 component in YSZ films. These YSZ values were more than 4 times larger than those of unmixed Y2O3 or ZrO2 films.

Preparation and Characterization of SrBi2(Ta1-xNbx)2O9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles

“…2) The theoretical input gas concentration of the source gas was calculated using R[source], which was defined in a previous paper. 8) The composition was measured by X-ray fluorescence spectroscopy (XRF) calibrated using standard samples. The constituent phase was identified by X-ray diffraction (XRD).…”

MOCVD of Single‐Axis c‐Oriented Strontium Bismuth Titanate Thin Films and Their Electrical Properties

“…The input gas-flow rate and concentration of the Bi source was directly controlled by a mass-flow controller. The theoretical input gas-flow rate of the source was defined as R[source] [23].…”

MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates

“…The composition of the films was controlled by the input gas flow rate of the Ir source keeping the flow rate fixed for the Sr source. The theoretical input gas flow rate of the Ir source, R[Ir(C 7 H 9 )(C 6 H 8 )], was defined elsewhere [16]. 60-70-nm-thick SrRuO 3 films were also grown on (111)SrTiO 3 substrates by MOCVD.…”