Y<sub>x</sub>Al<sub>1−x</sub>N thin films

Žukauskaitė, Agnė; Tholander, Christopher; Pališaitis, Justinas; Persson, Per; Darakchieva, Vanya; Sédrine, N. Ben; Tasnádi, Ferenc; Alling, Björn; Birch, Jens; Hultman, Lars

doi:10.1088/0022-3727/45/42/422001

Cited by 49 publications

(61 citation statements)

References 28 publications

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“…The XRD results show that all YxAl1-xN films, have wurtzite crystal structure with their c-axis wurtzite YxAl1-xN solid solutions in this composition range [4]. The observed broadening of the (0002) peak with increasing yttrium content is related to a decrease of the vertical coherence length.…”

Section: Resultsmentioning

confidence: 82%

“…More details about the growth and structural properties of the YxAl1-xN can be found elsewhere [4]. The composition and crystal orientation were determined by time of flight energy elastic recoil detection analysis (ToF-E ERDA) and X-ray Diffraction (XRD) using monochromatic Cu Kα1 radiation, respectively [4].…”

Section: Experimental Details and Data Analysismentioning

confidence: 99%

“…The composition and crystal orientation were determined by time of flight energy elastic recoil detection analysis (ToF-E ERDA) and X-ray Diffraction (XRD) using monochromatic Cu Kα1 radiation, respectively [4]. The surface roughness, measured on a similar set of samples, grown on Si (100) substrate, was found to vary between 1 and 5 nm [14].…”

Section: Experimental Details and Data Analysismentioning

confidence: 99%

“…Orita et al [13] reported the use of YAlN as protective film for improving long-time reliability in semiconductor light-emitting devices. Recently, we have demonstrated the successful synthesis of thin YxAl1-xN films on sapphire and Si substrates by reactive magnetron sputtering epitaxy (MSE) [4] and determined the band gap of YxAl1-xN (0 ≤ x ≤ 0.22) thin films by spectroscopic ellipsometry [14].…”

Section: Introductionmentioning

confidence: 99%

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Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

Sédrine¹,

Žukauskaitė²,

Birch³

et al. 2015

J. Phys. D: Appl. Phys.

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YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. In this work we report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 ≤ x ≤ 0.22.The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E1(TO) and LO, and the Raman active E2 phonons are found to exhibit one-mode behaviour, which is discussed in the framework of the MREI model. The compositional dependencies of the E1(TO), E2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, ∞ , the static dielectric constant, 0 , and the Born effective charge ZB are established and discussed.

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Section: Resultsmentioning

confidence: 82%

Section: Experimental Details and Data Analysismentioning

confidence: 99%

Section: Experimental Details and Data Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

Sédrine¹,

Žukauskaitė²,

Birch³

et al. 2015

J. Phys. D: Appl. Phys.

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“…Recently, YAlN alloys have been investigated experimentally and theoretically. 13 Mixing different materials in various amounts appoints a high dimensional parameter space that one can explore in a high-throughput manner. A computational realization of this technique has been applied successfully in searching for highperformance piezoelectric perovskites.…”

Section: Introductionmentioning

confidence: 99%

Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

et al. 2013

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Recently, ScAlN alloys attracted attention for their giant piezoelectric moduli. In this study the piezoelectric response of the wurtzite group-III nitrides AlN, GaN, and InN mixed with 50 mol% of ScN or YN is investigated using ab initio calculations. We confirm that the energy flattening phenomenon gives rise to the simultaneous appearance of elastic softening and local structural instability, and explains the enhanced piezoelectricity of the alloys. Furthermore, we present a volume matching condition for an efficient search of new piezoelectric materials. It states that alloys in which the parent components show close volume matching exhibit a flatter potential-energy landscape and higher increase of piezoelectric moduli. We suggest YInN, beyond ScAlN, as a promising material for piezoelectric energy harvesting with its enhanced ≈400% piezoelectric moduli.

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Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y_xAl_1‐xN) Thin Films

Pandit,

Schneider,

Schwarz

et al. 2023

Adv Eng Mater

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Alloying rare earth elements into aluminum nitride (AlN) thin films to increase the piezoelectric response has gained a lot of attention in the past few years. Many rare earth elements were investigated in which scandium alloying has resulted in the highest piezoelectric response for AlN. At the same time, researchers have also theoretically explored yttrium alloying as a feasible and economical alternative to scandium. In this paper, we demonstrate for the first time experimentally the increase of the piezoelectric response of sputter‐deposited YxAl1–xN thin films as a function of increasing yttrium concentration as predicted by density functional theory calculations. By using differently manufactured targets, YxAl1–xN thin films with four different yttrium alloying concentrations (9, 12, 15 and 20 at%.) are synthesized. Detailed thin film analysis is carried out and the highest value of d 33 measured is 12 pC/N for Y0.2Al0.8N, which is a 250 % increase compared to pure AlN. Even more, the Young’s modulus decreases with increasing yttrium concentration in excellent agreement with theoretical predictions. Finally, Y0.15Al0.85N and Y0.2Al0.8N layers show high crystalline stability in pure oxygen environment up to 800˚C, demonstrating high oxidation resistance even under harsh environmental conditions.This article is protected by copyright. All rights reserved.

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Y_xAl_1−xN thin films

Cited by 49 publications

References 28 publications

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y_xAl_1‐xN) Thin Films

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YxAl1−xN thin films

Cited by 49 publications

References 28 publications

Infrared dielectric functions and optical phonons of wurtzite YxAl1−xN (0 ⩽ x ⩽ 0.22)

Infrared dielectric functions and optical phonons of wurtzite YxAl1−xN (0 ⩽ x ⩽ 0.22)

Volume matching condition to establish the enhanced piezoelectricity in ternary (Sc,Y)0.5(Al,Ga,In)0.5N alloys

Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (YxAl1‐xN) Thin Films

Contact Info

Product

Resources

About

Y_xAl_1−xN thin films

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1−xN (0 ⩽ x ⩽ 0.22)

Enhancement of Piezoelectric Response in Yttrium Aluminum Nitride (Y_xAl_1‐xN) Thin Films