Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning

Bohdan, R.; Bercha, Artem; Trzeciakowski, Witold; Dybała, F.; Piechal, Bernard; Sanayeh, Marwan Bou; Reufer, M.; Brick, P.

doi:10.1063/1.2978359

Cited by 29 publications

(14 citation statements)

References 24 publications

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“…Threshold currents decrease with decreasing temperature and the emission power increases linearly with current (above threshold). The analysis of the pressure and temperature dependence of threshold currents is a subject of a separate paper [16]. The emission wavelengths are marked for each L-I curve in Fig.…”

Section: Methodsmentioning

confidence: 99%

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

Bercha

Bohdan

Trzeciakowski³

et al. 2009

Physica Status Solidi (b)

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1 Introduction InGaP/AlGaInP laser diodes are commercially available in the 635-690 nm range. Shorter wavelength operation is hampered by increased leakage currents. Meanwhile, the orange and yellow range has some important applications in medicine [1,2] and in optical communication using plastic fibers. So far the yellow range has been achieved by frequency doubling of infrared laser diodes [3][4][5] or by frequency doubling of diodepumped solid state lasers [6].High pressure increases the direct bandgap in III-V semiconductors and has been extensively used to characterize laser diodes [7][8][9][10][11] and to tune their emission wavelength [12][13][14]. For red lasers the pressure tuning can only be performed at low temperature in order to keep leakage currents low. In the present paper we describe L -I -V and spectral measurements of two InGaP/AlGaInP laser diodes in a wide range of pressures (up to 20 kbar) and temperatures (from 300 K down to 80 K). The first sample shows characteristic anomalies in L-I-V at low temperature and high pressure, attributed to impact ionization of holes in pcladdings [15]. The second sample does not show such anomalies and is tuned in the 70 nm range (from 645 nm to 575 nm) with low threshold current and high emission power.

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Section: Methodsmentioning

confidence: 99%

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

Bercha

Bohdan

Trzeciakowski³

et al. 2009

Physica Status Solidi (b)

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“…Also pressure tuning of AlGaInP has been demonstrated as a path towards yellow emission in [2]. But these complete solutions have so far not produced convincing results to be used as practical light sources for the applications we target.…”

Section: Introductionmentioning

confidence: 99%

High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm

Paschke

Wenzel

Fiebig

et al. 2013

IEEE Photon. Technol. Lett.

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In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a stabilized emission wavelength~1120 nm. Output powers up to 1 W and a maximum conversion efficiency of 34% were achieved in a spatial and spectral single-mode. In a preliminary reliability test, at 0.4 W a lifetime of > 1000 h could be demonstrated. Therefore, the laser sources should allow for an efficient non-linear frequency doubling to 560 nm.Index Terms-Diode laser, semiconductor laser, 1120 nm, high brightness, high spectral radiance.

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“…10,13 Figure 5 shows the relationship between output power, current, and temperature for diode 633-1 without the grating. Figure 6 shows similar data for the same diode with the diffraction grating attached.…”

Section: Low-temperature Laser Diode Performancementioning

confidence: 99%

“…Applications for lasers of these wavelengths (often in combination with frequency doubling) include slowing, cooling, trapping, and quantumstate-preparation of several different species of diatomic molecules [1][2][3][4] as well as laser cooling of beryllium ions for quantum information processing. 5,6 Techniques that have been previously employed to construct lasers in the 620 nm range include frequency doubling, 7,8 custom-fabrication of semiconductor materials, 9 and cryogenic cooling, 10 but these methods are typically costly and highly dependent on the specific final lasing wavelength. Alternatives to diode lasers include dye lasers, which operate at high power for many red wavelengths 11 but are maintenance-intensive, and optical parametric oscillators, which are broadly tunable across the visible spectrum 12 but are expensive to manufacture.…”

Section: Introductionmentioning

confidence: 99%

A low-temperature external cavity diode laser for broad wavelength tuning

Tobias

Rosenberg

Hutzler

et al. 2016

Review of Scientific Instruments

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We report on the design and characterization of a low-temperature external cavity diode laser (ECDL) system for broad wavelength tuning. The performance achieved with multiple diode models addresses the scarcity of commercial red laser diodes below 633 nm, which is a wavelength range relevant to spectroscopy of many molecules and ions. Using a combination of multiple-stage thermoelectric cooling and water cooling, the operating temperature of a laser diode is lowered to −64 • C, more than 85 • C below the ambient temperature. The laser system integrates temperature and diffraction grating feedback tunability for coarse and fine wavelength adjustments, respectively. For two different diode models, single-mode operation was achieved with 38 mW output power at 616.8 nm and 69 mW at 622.6 nm, more than 15 nm below their ambient temperature free-running wavelengths. The ECDL design can be used for diodes of any available wavelength, allowing individual diodes to be tuned continuously over tens of nanometers and extending the wavelength coverage of commercial laser diodes.

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Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning

Cited by 29 publications

References 24 publications

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

Pressure and temperature tuning of InGaP/AlGaInP laser diodes from red to yellow

High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm

A low-temperature external cavity diode laser for broad wavelength tuning

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