Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition

Saleem, Umar; Birowosuto, Muhammad Danang; Gogneau, N.; Coquet, Philippe; Tchernycheva, Maria; Wang, Wanjun

doi:10.1364/ome.7.001995

Cited by 14 publications

(12 citation statements)

References 33 publications

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“…3(a) 26 . The sharp and narrow peak for (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) reflection in GaN NCs supports that the materials exhibit high crystalline. It is noticeable that any additional crystal phases were not detectable except for the original material reflections.…”

Section: Resultsmentioning

confidence: 81%

“…3. We can clearly observe the reflections of r-plane sapphire (1-102), (2, −204) and GaN (11)(12)(13)(14)(15)(16)(17)(18)(19)(20), respectively, as shown in Fig. 3(a) 26 .…”

Section: Resultsmentioning

confidence: 83%

“…2(a). The growth direction of NCs are toward [11][12][13][14][15][16][17][18][19][20] from the fast Fourier transform (FFT) analysis of the high-resolution TEM (HRTEM) image, as shown in the inset of Fig. 2(a).…”

Section: Resultsmentioning

confidence: 99%

“…This can impose the declined luminescence properties of the materials and inefficient fabrication process. Even though several studies have attempted to grow nanostructured-GaN with visible luminescence characteristics using various approaches, such as rare earth doping, and defect-related emission 7,[18][19][20] , the efficient luminescence characteristics was inappropriate for the practical illumination devices.…”

mentioning

confidence: 99%

“…In this paper, we reported non-polar (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) GaN NCs for the application of a highly efficient visible luminescence source by hydride vapour phase epitaxy (HVPE). HVPE, with its high growth rate, could easily grow nanoscale GaN crystals without complicated processes and growth conditions.…”

mentioning

confidence: 99%

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Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Lee

Baik

et al. 2020

Sci Rep

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While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we report the oxygen-incorporated a-plane GaN NCs with highly visible illumination excitonic recombination characteristics. Epitaxially aligned a-plane NCs with average diameter of 100 nm were formed on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), accompanied by the oxygen supply during the growth. X-ray photoemission spectroscopy measurements proved that the NCs exhibited Ga-O bonding in the materials, suggesting the formation of oxidized states in the bandgap. It was found that the NCs emitted the visible luminescence wavelength of 400-500 nm and 680-720 nm, which is attributed to the transition from oxygen-induced localized states. Furthermore, time-resolved photoluminescence studies revealed the significant suppression of the quantum confined Stark effect and highly efficient excitonic recombination within GaN NCs. Therefore, we believe that the HVPE nonpolar GaN NCs can guide the simple and efficient way toward the nitride-based next-generation nanophotonic devices.

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Section: Resultsmentioning

confidence: 81%

“…3. We can clearly observe the reflections of r-plane sapphire (1-102), (2, −204) and GaN (11)(12)(13)(14)(15)(16)(17)(18)(19)(20), respectively, as shown in Fig. 3(a) 26 .…”

Section: Resultsmentioning

confidence: 83%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Lee

Baik

et al. 2020

Sci Rep

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Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Rajgoli

Hinde²,

Sant

et al. 2023

Physica Status Solidi (b)

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Among other group III-nitride semiconductor materials, gallium nitride (GaN) has received considerable attention for fabricating optical devices mainly in the UV region. [1] Along with this for fabricating a number of electronic gadgets, for example, high-power and high-frequency devices, [2] high-speed data transmitters, [3] high-voltage switching devices, [4,5] etc., extensive use of GaN is also well known. This demonstrates that GaN as a material has not only received special attention by the scientific community but also acknowledged due to its commercial importance. It's high electron saturation velocity (%1 Â 10 7 cm s À1 ), greater breakdown field than the Si, [6] and sustainability to work at high operating temperatures are key to realize such applications. The material has a wide bandgap of %3.4 eV at 300 K. [6] Excellent solubility with the other III-nitride semiconductor materials especially InN and AlN has enabled researchers to tune the bandgap of a material as per requirement. Hence in the past few years, GaN is extensively used to fabricate optoelectronic devices such as high-power light-emitting diodes. [7] Most of these devices are demonstrated using epitaxial films of GaN grown along c-axis, that is, [1] orientation. The performance and the efficiency of these devices mainly depend on the quality growth of GaN films with suitable dopants incorporated to have better control on its physical properties. Mostly epitaxial growth of GaN on GaN substrate is preferred but it is extremely expensive. Hence, epitaxial growth of GaN on low-cost substrates, for example, sapphire, Si, etc., for its commercial uses is justifiable. To grow epitaxial films of GaN on sapphire conventional methods, for example, molecular beam epitaxy (MBE), [1] metal-organic chemical vapor deposition (MOCVD), [8] atomic layer deposition (ALD), [9] metal-organic vapor-phase epitaxy (MOVPE) [10] are preferably used due to their due advantages. The use of a pulsed laser deposition (PLD) for growing GaN films is also demonstrated, taking its unique capabilities into consideration. [11,12] However, it is observed that optoelectronic devices fabricated using c-plane GaN suffer from piezoelectric polarization effect, affecting the carrier recombination lifetime and quantum efficiency of devices known as quantum conferment Stark effect. [13] Avoiding the Stark effect quality growth of GaN films along nonpolar surfaces is suggested. Hence, researchers are intensively studying the growth of GaN films along nonpolar surfaces such as m-and a-planes. [13][14][15] Mostly growth of a-plane GaN using r-plane sapphire, (010) LAO substrate, etc. is widely

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Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition

Kumagai

Itagaki

Kim

et al. 2022

Applied Surface Science

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Yellow and green luminescence in single-crystal Ge-catalyzed GaN nanowires grown by low pressure chemical vapor deposition

Cited by 14 publications

References 33 publications

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition

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