Zero-bias and low-chirp, monolithically integrated10 Gbit/sDFB laser and electroabsorption modulator on semi-insulatingInP substrate

Sahlen, O.; Lundqvist, Lars–Olov; Funke, S.

doi:10.1049/el:19960079

Cited by 11 publications

(4 citation statements)

References 6 publications

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“…A miniaturized modulator should aim for high EO and optical bandwidth (BW), low drive voltage, and high data capacity per symbol. Monolithically integrated indium phosphorus (InP) electroabsorption modulators (EAMs) 102 have lengths of ∼100 μm, need no traveling-wave electrodes, and hence have small footprints. However, they only support intensity modulation formats over a small range of wavelength.…”

Section: High-power Wide-band Optical Comb Sourcesmentioning

confidence: 99%

Scalability of Large-Scale Photonic Integrated Circuits

Guo

et al. 2023

ACS Photonics

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To keep up with the growing bandwidth demands, photonic integrated circuits (PICs) have been widely employed in various application scenarios where high capacity and high-bandwidthdensity interconnects are required. However, it is challenging to scale the PICs toward future petabit per second capacity requirements. We study the scalability bottlenecks of PICs in terms of guiding materials, dense integration approaches, wide-band optical sources, and highefficiency tunable and modulation devices. We also look for possible solutions to address these challenges. In the end, we provide a perspective on future PIC development. Moore's law for integrated photonics may last for a much shorter time than that in the microelectronics industry, requiring significant innovations and technological breakthroughs in PIC research.

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Section: High-power Wide-band Optical Comb Sourcesmentioning

confidence: 99%

Scalability of Large-Scale Photonic Integrated Circuits

Guo

et al. 2023

ACS Photonics

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“…The high-speed electro-absorption modulated DFB laser (EML) [1] is a key component for high-speed optical interconnect applications and long distance telecommunication transmission owing to its compactness, low driving voltage and high stability. Several technologies have been used for the preparation of EMLs such as selective area growth(SAG) [2], butt-joint growth [3], quantum well intermixing(QWI) [4], identical active layer [5], double stack active layer (DSAL) [6] and asymmetrical-twin-guide structure(ATG) [7]. Among the different possible coupling methods, the advantage of the buttjoint method is to be independently optimized for the DFB laser and the EAM part including their thickness, composition and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

A novel butt-joint scheme for the preparation of electro-absorptive lasers

Cheng¹,

Pan²,

Zhang³

et al. 2008

J. Phys. D: Appl. Phys.

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A 1.55 µm InGaAsP/InGaAsP multiple-quantum-well electro-absorption modulator (EAM) monolithically integrated with a distributed feedback laser (DFB) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. The threshold current of 25 mA and an extinction ratio of more than 30 dB are obtained by using the novel structure. The beam divergence angles at the horizontal and vertical directions are as small as 19.3° × 13°, respectively, without a spot-size converter by undercutting the InGaAsP active region. The capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pF.

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“…Among the many ways of laser-modulator monolithic integration explored [2][3][4][5][6], the butt-joint method has shown to be able to offer the best device characteristics because it allows independent optimization of the two components. So far, a few groups have fabricated the integrated devices successfully using the method which is generally realized by a growth-etch-regrowth (MQW-MQW) butt-coupling technique [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%