Zero bias resonant tunnel Schottky contact diode for wide-band direct detection

Chahal, Premjeet; Morris, Frank; Frazier, G.

doi:10.1109/led.2005.859622

Cited by 50 publications

(21 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The UHF operation indicates that the rectification mechanism, more specifically the enhancement in current above 0.5 V in forward bias (Fig. 6A) is due to a very fast charge injection or displacement process, possibly tunneling (35). Note that the current below 0.7 V in forward bias and at all voltages in reverse bias is strongly dependent on the temperature.…”

Section: Resultsmentioning

confidence: 91%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi 2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications.

show abstract

Section: Resultsmentioning

confidence: 91%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

View full text Add to dashboard Cite

show abstract

“…It might be seen that reducing R j from 1000 to 1 kΩ causes monotonous reduction of α from 33 to 12 A/W. Recalculation of the collected radiation power has been done by equation (8). After that values γ for different diodes were defined.…”

Section: Resultsmentioning

confidence: 99%

“…This simplifies the construction of the detector and leads to reducing noise level (eliminating 1/f-noise and others). For zero bias detectors at millimeter waves low-barrier Schottky diodes with δ-doping of surface region of a semiconductor [3,4], diodes with a planar barrier [5,6] and tunnel diodes [7,8] are used. For this purpose semimetalsemiconductor heterostructures ErAs/GaAs have been proposed [9].…”

mentioning

confidence: 99%

Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

Shashkin

Drjagin

Zakamov

et al. 2007

Int J Infrared Milli Waves

View full text Add to dashboard Cite

The principles of construction of millimeter wave detectors based on low-barrier Schottky diodes and planar antennas are discussed. The modified planar slot antenna with low beam spillover at the resonant frequency of 94 GHz has been developed. Experiments have been carried out to investigate detecting characteristics of the diodes with differential contact resistances R j ¼ 1 Ä 1000 kΩ at zero bias. Experimental data are well correspond to calculations in a simple model of detector. At R j ¼ 20 Ä 100 k Ω the maximum of rf-todc voltage sensitivity -more than 10000 V/W -is obtained. At lower values of R j ¼ 2 Ä 6 k Ω a better noise equivalent power (NEP), around 10 −12 W Hz −1/2 , is predicted.

show abstract

“…2). [46]); II -R j = 2.9 kΩ, C j = 5 fF, R s = 45 Ω, Z A = 100 -100⋅j Ω (InGaAs SBD, parameters from [46]); III -R j = 700 kΩ, C j = 8 fF, R s = 10 Ω, Z A = 100 Ω (Si SBD, parameters from [45]), IV -R j = 2.4 kΩ, C j + C P = 7.1 fF, R s = 5.5 Ω, Z A = 24 + 231⋅j Ω (InGaAs SBD, parameters from [6], resonant impedance matching at 89 GHz). The values NEP opt for Si SBD from [45] were shown, as it is in the bias regime when R j = 600 Ω (instead of 700 kΩ in the zero-bias regime that was taken to calculate the curve III).…”

Section: Thz Rectifying Detector Parametersmentioning

confidence: 99%

Untitled

2016

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜ opt ) and optical noise equivalent power (NEP opt ) of FETs in the broadband detection regime can achieve ℜ opt ~ 23 kV/W and NEP opt ~ 1⋅10-12 W/Hz 1/2 , respectively. At low radiation frequency ν in the THz spectral region the NEP opt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances.

show abstract

Zero bias resonant tunnel Schottky contact diode for wide-band direct detection

Cited by 50 publications

References 12 publications

All-printed diode operating at 1.6 GHz

All-printed diode operating at 1.6 GHz

Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

Untitled

Contact Info

Product

Resources

About