Zeta potential-tunable silica abrasives and fluorinated surfactants in chemical mechanical polishing slurries

Hong, Seung-Chul; Han, Deoksu; Jang, Keon‐Soo

doi:10.1016/j.wear.2020.203590

Cited by 4 publications

(3 citation statements)

References 49 publications

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“…After adjustment, the pH value can finally be controlled at 10, which is in line with the normal pH range of conventional alkaline slurries. In addition to the impact of micro-jets caused by bubble collapse mentioned above, the dispersibility of abrasives [35] and the chemical corrosion of reagents [36] will also have a great impact on MRR.…”

Section: Influencing Factors Of Mrrmentioning

confidence: 99%

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

Park

Hong

et al. 2023

Friction

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The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing (CMP) process cannot be ignored. In this study, the material removal mechanism of cavitation in the polishing process was investigated in detail. Based on the mixed lubrication or thin film lubrication, bubble—wafer plastic deformation, spherical indentation theory, Johnson—Cook (J—C) constitutive model, and the assumption of periodic distribution of pad asperities, a new model suitable for micro-nano bubble auxiliary material removal in CMP was developed. The model integrates many parameters, including the reactant concentration, wafer hardness, polishing pad roughness, strain hardening, strain rate, micro-jet radius, and bubble radius. The model reflects the influence of active bubbles on material removal. A new and simple chemical reaction method was used to form a controllable number of micro-nano bubbles during the polishing process to assist in polishing silicon oxide wafers. The experimental results show that micro-nano bubbles can greatly increase the material removal rate (MRR) by about 400% and result in a lower surface roughness of 0.17 nm. The experimental results are consistent with the established model. In the process of verifying the model, a better understanding of the material removal mechanism involved in micro-nano bubbles in CMP was obtained.

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Section: Influencing Factors Of Mrrmentioning

confidence: 99%

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

Park

Hong

et al. 2023

Friction

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“…Slurry is a critical CMP consumable that polishes wafers due to direct contact and is composed of abrasive and additives for improved primary planarization performances such as material removal rates and wafer surface roughness. 11,12 Ceria and silica abrasives are commonly used as slurry abrasives in CMP of SiO 2 film. However, the ceria abrasive is difficult to disperse and its size and shape are difficult to control, leading to the CeO 2 abrasives scratching the workpieces and causing serious particle contamination.…”

mentioning

confidence: 99%

“…15 Seungchul Hong and colleagues proposed that the surface treatment by aminosilane (APTES) for the colloidal silica nanoparticles (CSN) surfaces transitioned from negative to positive charges has improved the removal rate of the SiO 2 dielectric layer. 12 However, the corresponding components of a colloidal silica-based slurry on a high removal rate and surface roughness were not studied.…”

mentioning

confidence: 99%

Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

Wang

Zhou

et al. 2021

ECS J. Solid State Sci. Technol.

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Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

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Study on the polishing performance and mechanism of sapphire wafers by different types of degradable surfactants

Xu,

Peng,

Wang

et al. 2024

Surfaces and Interfaces

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Zeta potential-tunable silica abrasives and fluorinated surfactants in chemical mechanical polishing slurries

Cited by 4 publications

References 49 publications

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

Study on the polishing performance and mechanism of sapphire wafers by different types of degradable surfactants

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