Zinc nitride films prepared by reactive RF magnetron sputtering of zinc in nitrogen containing atmosphere

Jiang, Nanke; Georgiev, Daniel G.; Jayatissa, Ahalapitiya H.; Collins, R. W.; Chen, Jie; McCullen, Erik F.

doi:10.1088/0022-3727/45/13/135101

Cited by 32 publications

(23 citation statements)

References 43 publications

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“…. A peak around 530.4 eV corresponding to an O–Zn bond is observed, indicating a certain amount of oxygen exists within Zn 3 N 2 host, which was also observed in the reported articles . This type of phenomenon has been well known in InN .…”

Section: Resultssupporting

confidence: 80%

Zinc nitride as a potential high-mobility transparent conductor

Cao

Ninomiya

Yamada

2016

Phys. Status Solidi A

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Polycrystalline and epitaxial zinc nitride (Zn3N2) films were grown by a reactive rf‐magnetron sputtering technique. Phase‐pure films were grown but XPS results indicated that a small amount of oxygen exists within all Zn3N2–xOx films. We prove experimentally that substitutional O on the N site (normalOnormalN•) can be treated as an electron donor. The electrical and optical properties can be tuned by tuning the x values. High mobilities were achieved in both polycrystalline and epitaxial Zn3N2 films. In‐depth mobility analyses revealed both grain boundary scattering and ionization impurity scattering have main contribution to the electron transport in polycrystalline films, while neutral impurity scattering has negligible impact. The effective masses at the bottom of the conduction band were calculated to be (0.08 ± 0.03)m0, which is quite small. Such small electron effective masses contribute to lead to the high carrier mobility observed in Zn3N2. Optical bandgaps lie in a range from 2.2 to 2.7 eV, which may be ascribed to interstitial N 2p in‐gap state defects. We expect that zinc nitride with good transparency can be attained if the number of such defects is diminished. Our results in this work suggest that Zn3N2 is a potential choice for cost‐effective transparent semiconductor devices with high mobility.

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Section: Resultssupporting

confidence: 80%

Zinc nitride as a potential high-mobility transparent conductor

Cao

Ninomiya

Yamada

2016

Phys. Status Solidi A

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“…Though it is quite difficult to exactly quantify the lighter elements like N and O by the EDX measurement, we interpret the qualitative behaviour only. Oxygen remains as an unintentional impurity in the nitride based materials [20,21,28]. The oxygen impurity might have been incorporated during the growth process and on exposure of the surface to the atmosphere after deposition.…”

Section: Compositional Analysismentioning

confidence: 99%

Room temperature growth of high crystalline quality Cu3N thin films by modified activated reactive evaporation

Sahoo

Meher

Jain

2015

Materials Science and Engineering: B

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“…Many techniques have been used for Zn 3 N 2 thin film deposition, including radio frequency (RF) magnetron sputtering, − a metal salt electrochemical process, metalorganic chemical vapor deposition, , molecular beam epitaxy, , pulsed laser deposition, and direct reaction between Zn films and. NH 3 .…”

Section: Introductionmentioning

confidence: 99%

“…Electron donors in conductive Zn 3 N 2 films are believed to be nonintentional oxygen impurities. Nonintentional oxygen incorporation into Zn 3 N 2 during film growth has been frequently reported. ,,,, The incorporated oxygen probably comes from water vapor in residual gas present in the growth chamber. The nonintentional incorporation of oxygen occurred even when the film was grown in an ultrahigh vacuum chamber .…”

Section: Introductionmentioning

confidence: 99%

Oxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor

et al. 2015

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While many types of transparent conducting oxides (TCOs) have been developed, nitride-based transparent conductors remain rare. We examined the properties of zinc nitride doped with oxygen (Zn 3 N 2−x O x ) as a potential nitridebased transparent conductor. Electron density on the order of 10 20 cm −3 was achieved by heavy oxygen doping. A minimal resistivity (ρ) of 6.2 × 10 −4 Ω cm, comparable to those of TCOs, was observed for x = 0.19. Notably, the Zn 3 N 1.81 O 0.19 films had high electron mobility of 85 cm 2 V −1 s −1 , 2−3 times larger than the values for TCOs. Detailed analyses of mobility revealed that the electron transport was governed by ionized impurity scattering, and the dominant scattering center was substitutional oxygen. The contributions of additional scattering mechanisms were relatively minor. These findings explain the high observed mobility in Zn 3 N 2−x O x films. Contrary to our expectations, visible transmittance of Zn 3 N 2−x O x films was below 40%. X-ray photoelectron spectrometry suggested the existence of self-interstitial nitrogen (N I ) in Zn 3 N 2−x O x films. Low transmittance was attributable to optical absorption by electron transitions between the in-gap state originated from N I bonded to lattice nitrogen (N N ) and the band states. These results suggest that, when the formation of N N −N I bond is suppressed, Zn 3 N 2−x O x can be a high-mobility transparent conductor.

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Zinc nitride films prepared by reactive RF magnetron sputtering of zinc in nitrogen containing atmosphere

Cited by 32 publications

References 43 publications

Zinc nitride as a potential high-mobility transparent conductor

Zinc nitride as a potential high-mobility transparent conductor

Room temperature growth of high crystalline quality Cu3N thin films by modified activated reactive evaporation

Oxygen-Doped Zinc Nitride as a High-Mobility Nitride-Based Semiconductor

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