Zinc Oxide-Bismuth Oxide Low Q Decoupling Capacitor

Delaney, R. A.; Kaiser, Herbert

doi:10.1109/tpmp.1966.1135548

Cited by 3 publications

(1 citation statement)

References 13 publications

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“…Although the properties of bismuth oxide are less well characterized, some work has been done (11)(12)(13), and it is well established that under most circumstances it is a p-type semiconductor (13). Some of the dielectric, resistive, and electroluminescent properties of zinc oxide with additions of bismuth oxide have been reported recently by Kosman and Gesse (14), Kosman and Pettsold (15), and Delaney and Kaiser (16).…”

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confidence: 99%

Polycrystalline Zinc Oxide Dielectrics

Delaney¹,

Kaiser²

1967

J. Electrochem. Soc.

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unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-15 to IP Vol. 114, No. 8 POLYCRYSTALLINE ZINC OXIDE DIELECTRICS ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-05-15 to IP Vol. 114, No. 8 POLYCRYSTALLINE ZINC OXIDE DIELECTRICS 841

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confidence: 99%