2005
DOI: 10.1016/j.surfcoat.2004.10.111
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Zinc oxide films by thermal oxidation of zinc thin films

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Cited by 77 publications
(40 citation statements)
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“…For the ZnO films oxidized at higher temperature, these values, calculated using the (002) and (100) diffraction peaks, are slightly larger than standard values for ZnO polycrystalline powder (a = 3.249 Å, c = 5.201 Å) [14,16]. This fact can be explained as an effect of the oxygen depletion in the film during oxidation process [14,16]. The presence of other phases in ZnO system, as well of non-oxidized Zn atoms is not observed.…”
Section: Microstructural Characteristicsmentioning
confidence: 59%
See 1 more Smart Citation
“…For the ZnO films oxidized at higher temperature, these values, calculated using the (002) and (100) diffraction peaks, are slightly larger than standard values for ZnO polycrystalline powder (a = 3.249 Å, c = 5.201 Å) [14,16]. This fact can be explained as an effect of the oxygen depletion in the film during oxidation process [14,16]. The presence of other phases in ZnO system, as well of non-oxidized Zn atoms is not observed.…”
Section: Microstructural Characteristicsmentioning
confidence: 59%
“…Therefore, the films crystallites are preferentially oriented with c-axis normal to substrate surface. ZnO crystalline structure [1,11,[14][15][16]. It can be observed that the diffraction patterns do not indicate the presence of zinc crystalline phase in ZnO films.…”
Section: Microstructural Characteristicsmentioning
confidence: 99%
“…Inorganic nc-ZnO is a promising candidate for such hybrid structures, due to its unique properties, such as wide bandgap (3.2eV), high conductivity and high excitonic binding energy (60Mev). 10 In addition, the conduction band edge position of ZnO is similar to that of TiO 2 . Dye-sensitization has provided a successful solution to extending the absorption range of the cell to low-energy light with effective result.…”
Section: Introductionmentioning
confidence: 74%
“…Porous ZnO thin films were also obtained by thermally oxidizing metallic Zn films deposited by DC sputtering [35]. The effect of using different pressure conditions (2 and 10 mTorr) and deposition atmospheres (pure Ar instead of mixed Ar + O2, 10%) was first investigated.…”
Section: Sputteringmentioning
confidence: 99%