Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

Li, F.M.; Hsieh, Gen-Wen; Dalal, S. H.; Newton, Mary; Stott, J.E.; Hiralal, Pritesh; Nathan, Arokia; Warburton, Paul A.; Ünalan, Hüsnü Emrah; Beecher, Paul; Flewitt, Andrew J.; Robinson, Ian; Amaratunga, G.A.J.; Milne, W. I.

doi:10.1109/ted.2008.2005180

Cited by 52 publications

(34 citation statements)

References 61 publications

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“…[103] The synthesis and physical properties of ZnO have been extensively investigated. [108,109] With ZnO as the ETM, a fully room-temperature-processed PSC was demonstrated for the first time, with an efficiency as high as 15.7%. [108,109] With ZnO as the ETM, a fully room-temperature-processed PSC was demonstrated for the first time, with an efficiency as high as 15.7%.…”

Section: Znomentioning

confidence: 99%

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Haque

Sheikh

Guan

et al. 2017

Advanced Energy Materials

165

121

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Over the past few years, hybrid halide perovskites have emerged as a highly promising class of materials for photovoltaic technology, and the power conversion efficiency of perovskite solar cells (PSCs) has accelerated at an unprecedented pace, reaching a record value of over 22%. In the context of PSC research, wide‐bandgap semiconducting metal oxides have been extensively studied because of their exceptional performance for injection and extraction of photo‐generated carriers. In this comprehensive review, we focus on the synthesis and applications of metal oxides as electron and hole transporters in efficient PSCs with both mesoporous and planar architectures. Metal oxides and their doped variants with proper energy band alignment with halide perovskites, in the form of nanostructured layers and compact thin films, can not only assist with charge transport but also improve the stability of PSCs under ambient conditions. Strategies for the implementation of metal oxides with tailored compositions and structures, and for the engineering of their interfaces with perovskites will be critical for the future development and commercialization of PSCs.

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Section: Znomentioning

confidence: 99%

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Haque

Sheikh

Guan

et al. 2017

Advanced Energy Materials

165

121

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“…This value is lower than 13.2-23.5 V/decade of the solution-processed ZnO TFTs [67] and 0.61-3 V/decade of the BaZnSnO TFTs [68]. The saturation field effect mobility is calculated from the plot of (I DS ) 1/2 against V GS [69]. The extracted mobility is 6.4 cm 2 /Vs.…”

Section: The A-igzo Tft With the Sol-gel Sio 2 Gate Dielectricmentioning

confidence: 99%

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Hsu

Chu

Sun

et al. 2016

J. Display Technol.

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Abstract-In this work, low temperature fabrication of an amorphous InGaZnO thin film transistor (a-IGZO TFT) was demonstrated. The maximum process temperature was 200 °C. The gate dielectric was a sol-gel SiO 2 film while the channel layer was a sputtered a-IGZO semiconductor. The optimal sol-gel film for gate dielectric application was obtained by considering effects of surfactant, solvent, plasma treatment and curing process on the film characteristics. The reasons for leakage current variations of the sol-gel films prepared with different conditions were examined by a scanning electron microscope and Fourier-transform infrared analysis. The leakage current mechanism of the optimal sol-gel SiO 2 film was found to be dominated by Ohmic conduction. The characteristics of a-IGZO layers deposited with oxygen flow rates of 0-3 sccm were investigated. By integrating the optimal sol-gel SiO 2 dielectric and the sputtered a-IGZO layer, we successfully fabricated the TFT with a field effect mobility of 6.4 cm 2 /Vs. The interface trap density between the sol-gel SiO 2 and the a-IGZO layer was found to be 9.2 × 10 11 cm -2 eV -1 .

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“…ZnO exhibits almost all the unique properties required to make it a feasible gas sensor such as moderate direct band gap (3.37 eV), high mobility of conduction electrons, better chemical and thermal stability under ambient conditions and good activity in redox reactions. 13,14 Thus 0D, 1D, 2D and 3D nanostructures of ZnO have been extensively studied worldwide to utilize their excellent gas sensing properties in the fabrication of improved gas sensing devices at low cost. Moreover, the longer dimensions of 1D ZnO nanostructures (nanotubes, nanowires and nanorods) make them suitable to connect with the macroscopic world for electrical and many other physical measurements.…”

Section: Introductionmentioning

confidence: 99%

Probing the highly efficient room temperature ammonia gas sensing properties of a luminescent ZnO nanowire array prepared via an AAO-assisted template route

et al. 2014

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Here, we report the facile synthesis of a highly ordered luminescent ZnO nanowire array using a low temperature anodic aluminium oxide (AAO) template route which can be economically produced in large scale quantity. The as-synthesized nanowires have diameters ranging from 60 to 70 nm and length ∼11 µm. The photoluminescence spectrum reveals that the AAO/ZnO assembly has a strong green emission peak at 490 nm upon excitation at a wavelength of 406 nm. Furthermore, the ZnO nanowire array-based gas sensor has been fabricated by a simple micromechanical technique and its NH 3 gas sensing properties have been explored thoroughly. The fabricated gas sensor exhibits excellent sensitivity and fast response to NH 3 gas at room temperature. Moreover, for 50 ppm NH 3 concentration, the observed value of sensitivity is around 68%, while the response and recovery times are 28 and 29 seconds, respectively. The present synthesis technique to produce a highly ordered ZnO nanowire array and a fabricated gas sensor has great potential to push the low cost gas sensing nanotechnology.

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Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

Cited by 52 publications

References 61 publications

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Probing the highly efficient room temperature ammonia gas sensing properties of a luminescent ZnO nanowire array prepared via an AAO-assisted template route

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Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

Cited by 52 publications

References 61 publications

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Metal Oxides as Efficient Charge Transporters in Perovskite Solar Cells

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO2Gate Dielectric

Probing the highly efficient room temperature ammonia gas sensing properties of a luminescent ZnO nanowire array prepared via an AAO-assisted template route

Contact Info

Product

Resources

About

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric