Zinc oxide thin film-based MEMS acoustic sensor with tunnel for pressure compensation

Arora, Aarti; Arora, Anil; Dwivedi, Vivek K.; George, P.J.; Sreenivas, K.; Gupta, Vinay

doi:10.1016/j.sna.2007.09.016

Cited by 29 publications

(14 citation statements)

References 13 publications

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“…We believe that due to the strain of the surface as function of annealing temperatures. As-grown film particles are under compressive strain, and strain relaxation increases with temperature [1,31]. No impurities or structural defects, such as vacancies and zinc interstitials, were observed.…”

Section: International Letters Of Chemistry Physics and Astronomy Vomentioning

confidence: 97%

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Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

A.Najim

Rozaiq

2013

ILCPA

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ZnO thin films with Cd/Zn nominal ratios of 0 %, 1 %, 3 %, 5 %, and 7 % and thickness of 0.7 µm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

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Section: International Letters Of Chemistry Physics and Astronomy Vomentioning

confidence: 97%

“…The decrease in transmittance is due to the increase in scattering centers or defects formed after annealing [31].…”

Section: International Letters Of Chemistrymentioning

confidence: 99%

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Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

A.Najim

Rozaiq

2013

ILCPA

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“…Most rf-MEMS involve the manipulation of air as the dielectric materials. Various designs of capacitive rf-MEMS switches made out of nickel, aluminum, gold or zinc oxide have so far been reported in literature, see for instance [1,11]. The mechanical simulation of switch consists in the following design concept: the switch design is based on a suspended metal bridge (zinc oxide in our example) which connects two grounds of a coplanar wave-guide and crosses over a signal line on which a dielectric foundation is deposited.…”

Section: Numerical Simulationsmentioning

confidence: 99%

Modeling and analysis of the unilateral contact of a piezoelectric body with a conductive support

Barboteu

Sofonea

2009

Journal of Mathematical Analysis and Applications

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We consider a mathematical model which describes the quasistatic process of contact between a piezoelectric body and an electrically conductive support, the so-called foundation. We model the material's behavior with a nonlinear electro-viscoelastic constitutive law; the contact is frictionless and is described with the Signorini condition and a regularized electrical conductivity condition. We derive a variational formulation for the problem and then we prove the existence of a unique weak solution to the model. The proof is based on arguments of nonlinear equations with multivalued maximal monotone operators and fixed point. Then we introduce a fully discrete scheme, based on the finite element method to approximate the spatial variable and the backward Euler scheme to discretize the time derivatives. We treat the unilateral contact conditions by using an augmented Lagrangian approach. We implement this scheme in a numerical code then we present numerical simulations in the study of two-dimensional test problems, together with various comments and interpretations.Crown

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“…It has attracted intensive research efforts for its unique properties and multifunctional applications [4][5][6][7]. ZnO is a promising material, relative to other WBG semiconductors, for ultraviolet (UV) photon detector applications due to its attractive properties such as good photoconductivity, easy processing at low temperatures, and excellent radiation hardness [1,4,[8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Enhanced photo-response of thermally treated Zinc oxide ultra-violet photon detector with furnace method and pulsed laser irradiation

et al. 2009

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Ultra-Voilet (UV) photodetector is fabricated by rf magnetron sputtered ZnO thin films of different thickness (50 to 400 nm). ZnO film with thickness 100nm is found to exhibit enhanced UV photo response in comparison to that observed in the thicker films and is thermally treated by two different techniques, one by furnace method and another by pulsed laser irradiation. In the furnace method, the as-grown 100nm ZnO thin film is post annealed in a range of temperature from 100°C to 400°C for 1hr. The I on /I off ratio of furnace annealed ZnO film of thickness 100 nm at 300°C is found to be (7 x 10 3 ) with fast response time of 50 ms in comparison to other annelead films. In the second method, as-grown 100nm ZnO film is irradiated by pulsed Nd:YAG laser corresponding to both fundamental wavelength (1064 nm) and forth harmonics (266 nm) to modify its defects profiles. Laser (λ=266 nm) irradiated detector exhibits enhanced response (3.7 x 10 4 ) with fast response speed (30ms), showing its promising application for detection of low intensity UV photons.

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Zinc oxide thin film-based MEMS acoustic sensor with tunnel for pressure compensation

Cited by 29 publications

References 13 publications

Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

Modeling and analysis of the unilateral contact of a piezoelectric body with a conductive support

Enhanced photo-response of thermally treated Zinc oxide ultra-violet photon detector with furnace method and pulsed laser irradiation

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