Zinc oxysulfide thin films grown by atomic layer deposition

Sanders, Brian W.; Kitai, Adrian

doi:10.1021/cm00023a015

Cited by 67 publications

(53 citation statements)

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“…The direct band gap of Zn(O,S) layer is approximately 3.6 eV ( Fig. 4b) being slightly higher than the Eg value presented by (Sanders and Kitai, 1992) for ALD deposited Zn(O,S) films with sulphur to zinc ratio of 0.9.…”

Section: Properties Of Zn(os) Layersmentioning

confidence: 55%

“…So far, Zn(O,S) layers have been prepared by methods that are either slow, not in-line suitable or vacuum techniques, such as chemical bath deposition (CBD) (Buffière et al, 2011;Kushiya, 2004;Sáez-Araoz et al, 2008;Witte et al, 2013), atomic layer deposition (ALD) l t erjorkm n et l l t er-j rkm n et l., 2006; Sanders and Kitai, 1992;Zimmermann et al, 2006), sputtering (Grimm et al, 2011(Grimm et al, , 2010Klenk et al, 2013;Kobayashi et al, 2013;Nakamura et al, 2013). The best efficiencies for solar cells with sputtered or ALD deposited Zn(O,S) buffer layer are similar, 18.3% and 18.5% respectively (Klenk et al, 2013;Zimmermann et al, 2006).…”

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confidence: 99%

“…The reported band gap of ALD and CBD deposited Zn(O,S) layers are 3.6 eV (Sanders and Kitai, 1992) and 3.7 eV (Buffière et al, 2011), respectively. The band gap of sputtered Zn(O,S) has a parabolic dependency with the S/(S+O) ratio varying from 2.6 eV to 3.6 eV (Grimm et al, 2011;Kobayashi et al, 2013).…”

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confidence: 99%

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Study of Zn(O,S) films grown by aerosol assisted chemical vapour deposition and their application as buffer layers in Cu(In,Ga)(S,Se)2 solar cells

et al. 2015

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To reduce the use of toxic and expensive elements in chalcopyrite thin film solar cells, materials such as cadmium or indium used in buffer layers need to be substituted. Zn(O,S) is considered to be a potential buffer layer material when deposited with a fast and inexpensive method. Zn(O,S) layers have been prepared by aerosol assisted chemical vapour deposition (AACVD) technique. AACVD technique is a simple non-vacuum process where the thin film deposition temperatures do not exceed 250°C. 10 mM spray solution was made by dissolving zinc(II)acetylacetonate monohydrate in ethanol. The films were grown on Mo substrate at 225°C (film growth temperature). The effect of deposition parameters (spray solution concentration, N 2 flow rate, H 2 S flow rate) on Zn(O,S) thin film properties were studied with SEM and XRD. Thereupon optimizing the deposition parameters, homogeneous and compact Zn(O,S) thin films were obtained and the films were employed in the chalcopyrite thin film solar cell structure by growing films on Cu(In,Ga)(S,Se) 2 substrates industrially produced by BOSCH Solar CISTech GmbH. The resulting cells were studied using current-voltage and quantum efficiency analysis and compared with solar cell references that include In 2 S 3 and CdS as buffer layer deposited by ion layer gas reaction and chemical bath deposition, respectively. The best output of the solar cell containing Zn(O,S) as buffer layer and without intrinsic ZnO under standard test conditions (AM 1.5G, 100 mW/cm 2 , 25°C) is: Voc=573 mV, Jsc=39.2 mA/cm 2 , FF=68.4% and efficiency of 15.4% being slightly better than the In 2 S 3 or CdS containing solar cell references.

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Section: Properties Of Zn(os) Layersmentioning

confidence: 55%

mentioning

confidence: 99%

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Study of Zn(O,S) films grown by aerosol assisted chemical vapour deposition and their application as buffer layers in Cu(In,Ga)(S,Se)2 solar cells

et al. 2015

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“…By varying the cycle ratio of ZnO to ZnS during the ALD process, the elemental composition of Zn(O,S) can be adjusted. 31 Fig. 2(a)) depending on the cleaving direction with respect to these platelet grains.…”

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confidence: 99%

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

Sinsermsuksakul

Hartman

Kim

et al. 2013

Applied Physics Letters

336

230

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SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition of p-type tin(II) sulfide, SnS, and n-type zinc oxysulfide, Zn(O,S), using a device structure of soda-lime glass/Mo/SnS/Zn(O,S)/ZnO/ITO. A record efficiency was achieved for SnS-based thin-film solar cells by varying the oxygen-to-sulfur ratio in Zn(O,S). Increasing the sulfur content in Zn(O,S) raises the conduction band offset between Zn(O,S) and SnS to an optimum slightly positive value. A record SnS/Zn(O,S) solar cell with a S/Zn ratio of 0.37 exhibits short circuit current density (Jsc), open circuit voltage (Voc), and fill factor (FF) of 19.4 mA/cm2, 0.244 V, and 42.97%, respectively, as well as an NREL-certified total-area power-conversion efficiency of 2.04% and an uncertified active-area efficiency of 2.46%.

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“…5,6,8,9 Various growth methods have been previously reported for Zn(O,S), such as sputtering, 8,10,11 chemical bath deposition (CBD), 12 pulse laser deposition (PLD), 13,14 and ALD. 5,6,15,16 ALD has the advantage of easily controlling the stoichiometry of multicomponent films by simply tailoring the pulse ratio of the precursors.…”

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confidence: 99%

Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

Park

Heasley

Gordon

2013

Applied Physics Letters

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Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition (ALD) were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from 10 19 to 10 15 cm -3 by post-deposition annealing in oxygen at temperatures from 200°C to 290°C. In the case of Zn(O,S) with S/Zn = 0.37, despite the considerable change in the electron carrier concentration, the bandgap energy decreased by onlỹ 0.1 eV, and the crystallinity did not change much after annealing. The oxygen/zinc ratio increased by 0.05 after annealing, but the stoichiometry remained uniform throughout the film.

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Zinc oxysulfide thin films grown by atomic layer deposition

Cited by 67 publications

References 0 publications

Study of Zn(O,S) films grown by aerosol assisted chemical vapour deposition and their application as buffer layers in Cu(In,Ga)(S,Se)2 solar cells

Study of Zn(O,S) films grown by aerosol assisted chemical vapour deposition and their application as buffer layers in Cu(In,Ga)(S,Se)2 solar cells

Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

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