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Articles you may be interested inTemperature-dependent infrared dielectric functions of MgO crystal: An ellipsometry and first-principles molecular dynamics study Growth temperature dependence of the magnetic and structural properties of epitaxial Fe layers on MgO (001) High-quality MgO thin films deposited on Si( 111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C,HS), and H20. The growth orientation of MgO changes from ( 111) to ( 100)) when the temperature of the silicon substrate changes from 600 to 900 "C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO.