Temperature-dependence of the growth orientation of atomic layer growth MgO

Abstract

Articles you may be interested inTemperature-dependent infrared dielectric functions of MgO crystal: An ellipsometry and first-principles molecular dynamics study Growth temperature dependence of the magnetic and structural properties of epitaxial Fe layers on MgO (001) High-quality MgO thin films deposited on Si( 111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C,HS), and H20. The growth orientation of MgO changes from ( 111) to ( 100)) when the temperature of the silicon substrate changes from 600 to 900 "C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO.

Integration of MgO on Si(001) Using SrO and SrTiO3 Buffer Layers by Molecular Beam Epitaxy

“…For a 6:5 coincident epitaxy however, in this same orientation the misfit is just +1.7% and the cube-oncube orientation has been reported for SrO deposited on MgO(001) substrates [9]. In the present study epitaxial MgO has been deposited on Si(001) using either a SrO or a SrTiO 3 …”

“…Cross-sectional TEM of the SrTiO 3 film formed by recrystallization (Fig. 6) likewise indicates a SrTiO 3 [100]||Si[110] orientation. X-ray diffraction analysis of the film indicates that it is phase pure with a single epitaxial orientation.…”

“…Figure 4(b) shows an AFM image of the resultant 5.2 nm SrTiO 3 film with a mixed two dimensional and island growth morphology. The RHEED patterns for SrTiO 3 films on Si(001) prepared by both methods indicate a SrTiO 3 [100]||Si [110] orientation. Cross-sectional TEM of the SrTiO 3 film formed by recrystallization (Fig.…”

“…However, the large lattice mismatch between Si(001) and MgO makes direct epitaxial growth of MgO on Si difficult. Nevertheless, direct deposition of MgO on Si has been reported by a number of investigators despite a lattice mismatch of −29% for a fully commensurate cube-on-cube orientation of MgO on Si(001) [1][2][3]. To reduce the interfacial strain and facilitate epitaxy, epitaxial MgO has been deposited on Si using buffer layers.…”

CVD of MgO Thin Films from Bis(methylcyclopentadienyl) Magnesium

“…[9] To this regard, it is worthwhile noticing that ALD of MgO from Mg(C 5 H 5 ) 2 is successful only if water vapor is introduced into the reaction atmosphere, while no MgO film is formed in an O 2 atmosphere. [10] A detailed analysis of the chemical composition of the film was carried out using XPS, focusing in particular on Mg-containing species and on the presence of contaminants arising from the CVD process. As a matter of fact, the results obtained pointed to a very similar composition, irrespective of the deposition temperature adopted.…”