Zinc segregation in HPB grown nuclear detector grade Cd1−xZnxTe

Growth of In doped CdZnTe by vertical Bridgman method and the effect of In on the crystal properties

“…(2) with Eq. (1), we deduce that k 0 equals 1.3, which is approximately equal to the Zn segregation coefficient in CdTe [8]. That is to say, for a CdZnTe:In ingot, the redistribution of Zn is comparable to the redistribution of In in ingots with x much less than 1.…”

Photoluminescence analysis of Cd0.8Mn0.2Te single crystal grown by the vertical Bridgman method

“…In comparison with Cd 1−x Zn x Te, the bandgap of Cd 1−x Mn x Te is more sensitive to Mn content, therefore, less Mn content is added for the same bandgap in the range 1.7-2.2 eV which is required for optimal signal-to-noise ratio in radiation detectors [7]. The segregation coefficient of Zn in CdTe is 1.3 that high compositional variation is inevitable in Cd 1−x Zn x Te [8]. Meanwhile, the segregation coefficient of Mn in CdTe is close to unit so that the uniform Mn distribution is expected in entire Cd 1−x Mn x Te ingots [9].…”

Thermal treatment of indium-doped Cd1−xZnxTe single crystals

“…Although indium can compensate part of the defects to obtain high resistivity, it is also an impurity for intrinsic CZT crystal and introduces defects. Moreover, the larger-than-unity segregation coefficient of Zn in CZT introduces inhomogeneity in the Zn content in CZT ingots [7]. Therefore, the thermal treatment after growth plays an important role in improving CZT quality.…”