Anodic dc electrochemical luminescence ͑ECL͒ property of nondoped and rare earth ͑RE͒ ion-doped MgIn 2 O 4 electrodes, famous as a transparent electronic conducting material, was investigated. Nondoped and Dy 3+ , Sm 3+ , Ho 3+ , Er 3+ , Eu 3+ , and Tm 3+ doped MgIn 2 O 4 , usually exhibiting no or very weak photoluminescence ͑PL͒, showed ECL under anodic polarization over 20 V. ECL luminescence can be attributed to that from the oxygen defect for nondoped MgIn 2 O 4 and to that from the doped emission centers ͑RE ions͒ for MgIn 2 O 4 :RE, respectively. Doped RE ions form solid solution within MgIn 2 O 4 host. From the Rietveld refinement analysis of X-ray patterns, we concluded that RE ions are located at the 16d site in MgIn 2 O 4 . The ECL intensity dependence on the Er 3+ ion concentration of MgIn 2 O 4 :Er 3+ showed a maximum at ͓Er 3+ ͔ = 2% and then decreased, whereas PL intensity monotonously increased with increasing Er 3+ concentration. These results suggest that electron conductivity of MgIn 2 O 4 host are also related with the ECL property.