Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II–VI compound superlattices on InP substrates

Nomura, Ichirou; Yamazaki, T.; Hayashi, Hiroaki; Hayami, Koichi; Kato, Masaki; Kishino, Katsumi

doi:10.1016/j.jcrysgro.2006.11.183

Cited by 4 publications

(1 citation statement)

References 3 publications

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“…Furthermore, the extremely low value of lattice strain, 0.08%, should be noted as another measure for structural integrity. Artificial lattice films, such as GaAs, SiC, and ZnO, constructed by vapor-phase beam epitaxy techniques generally show lattice strain of 0.06−0.1%. − …”

Section: Resultsmentioning

confidence: 99%

Construction of Highly Ordered Lamellar Nanostructures through Langmuir−Blodgett Deposition of Molecularly Thin Titania Nanosheets Tens of Micrometers Wide and Their Excellent Dielectric Properties

et al. 2009

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Exfoliated unilamellar titania nanosheets of Ti(0.87)O(2) with a lateral size of 10-30 microm were deposited layer-by-layer onto various substrates by Langmuir-Blodgett procedure to produce a highly ordered lamellar nanofilms. The nanosheets dispersed in an aqueous suspension containing quaternary ammonium ions as a supporting electrolyte floated spontaneously at the air/liquid interface, and they were successfully transferred onto the substrate after surface compression. Neat tiling of the nanosheets could be realized at an optimized surface pressure. The film thus obtained was exposed to UV light to turn the substrate surface hydrophilic, which was helpful for stable repetition of monolayer deposition. Layer-by-layer growth was confirmed by UV-visible absorption spectra, which showed progressive enhancement of an absorption band due to the nanosheet. Cross-sectional transmission electron microscopy images visualized the ultrathin film homogeneously deposited on the substrate surface and a lamellar fringe of the layer-by-layer assembled nanosheets was clearly resolved at a higher magnification. X-ray diffraction data on the films showed sharp basal reflections up to the seventh order, and Williamson-Hall analysis of the pattern indicated that the film was coherent across the total thickness with respect to X-ray and that the lattice strain was extremely small. In addition, the first basal reflection was accompanied by small satellite peaks, which are accounted for by the Laue interference function. All these features clearly indicate the formation of a highly ordered lamellar nanostructure of the titania nanosheets comparable to artificial lattice films produced via modern vapor-phase deposition processes. The obtained films showed superior dielectric and insulating properties as a reflection of the highly organized film nanoarchitecture.

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Section: Resultsmentioning

confidence: 99%

Construction of Highly Ordered Lamellar Nanostructures through Langmuir−Blodgett Deposition of Molecularly Thin Titania Nanosheets Tens of Micrometers Wide and Their Excellent Dielectric Properties

et al. 2009

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Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates

Nomura

Sawafuji

Kishino

2011

Jpn. J. Appl. Phys.

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The photopumped lasing characteristics of double heterostructures with a BeZnSeTe active layer grown on InP substrates were systematically investigated. Green-to-yellow lasing emissions from 538 to 570 nm were observed at room temperature (RT). The threshold excitation power density (P th) was approximately 30 kW/cm2. From the temperature dependence of P th, stable lasing emissions were obtained up to 353 K. The characteristic temperatures of P th were 106 to 140 K above RT. The relationship between the threshold gain (G th) and the threshold carrier density (N th) was estimated from the cavity length dependence of P th and by waveguide analysis. Using the relationship between G th and N th, the threshold current densities (J th) of electrically pumped BeZnSeTe laser diode structures were calculated to be less than 1.3 kA/cm2. J th decreases as the lasing wavelength increases from 538 to 570 nm. The above results demonstrate that BeZnSeTe is a promising active-layer material for high-performance green-to-yellow LDs.

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Electronic states and interband transitions of strained In z Ga x Al1−z−x P/In0.5Al0.5P multiple quantum wells

Kim

You

Kim

et al. 2012

Journal of the Korean Physical Society

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Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II–VI compound superlattices on InP substrates

Cited by 4 publications

References 3 publications

Construction of Highly Ordered Lamellar Nanostructures through Langmuir−Blodgett Deposition of Molecularly Thin Titania Nanosheets Tens of Micrometers Wide and Their Excellent Dielectric Properties

Construction of Highly Ordered Lamellar Nanostructures through Langmuir−Blodgett Deposition of Molecularly Thin Titania Nanosheets Tens of Micrometers Wide and Their Excellent Dielectric Properties

Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates

Electronic states and interband transitions of strained In z Ga x Al1−z−x P/In0.5Al0.5P multiple quantum wells

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