ZnO:Al with tuned properties for photovoltaic applications: thin layers and high mobility material

Ruske, F.; Rößler, Robert; Wimmer, M.; Schönau, S.; Kämpfer, Stefan; Hendrichs, Max; Neubert, S.; Korte, Lars; Rech, Bernd

doi:10.1117/12.2001290

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“…However, while a good buffer layer can mitigate lattice-mismatch effects, it can never do so perfectly, as manifested by an increase in mobility l as thickness d increases. This phenomenon has been reported by a large number of workers over the last decade [2][3][4][5][6][7][8][9][10][11] and can often be characterized by a simple phenomenological formula [8][9][10][11] …”

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confidence: 96%

Significant mobility enhancement in extremely thin highly doped ZnO films

Heller

Yao

Yang

2015

Applied Physics Letters

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Highly Ga-doped ZnO (GZO) films of thicknesses d = 5, 25, 50, and 300 nm, grown on 160-nm ZnO buffer layers by molecular beam epitaxy, had 294-K Hall-effect mobilities μH of 64.1, 43.4, 37.0, and 34.2 cm2/V-s, respectively. This extremely unusual ordering of μH vs d is explained by the existence of a very high-mobility Debye tail in the ZnO, arising from the large Fermi-level mismatch between the GZO and the ZnO. Scattering theory in conjunction with Poisson analysis predicts a Debye-tail mobility of 206 cm2/V-s at the interface (z = d), falling to 58 cm2/V-s at z = d + 2 nm. Excellent fits to μH vs d and sheet concentration ns vs d are obtained with no adjustable parameters.

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