ZnO-based film bulk acoustic resonator devices on a specially designed Bragg reflector

Mai, Linh; Pham, Van-Su; Yoon, Giwan

doi:10.1007/s00339-009-5142-1

Cited by 14 publications

(5 citation statements)

References 9 publications

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“…Plenty of researchers have recognized the adverse effects of metal electrodes on the Q's of attached-electrode thin-film piezoelectric resonators and have sought to remedy this problem via a variety of approaches that span from reducing electrode roughness [30], to optimizing the electrode material [16], [31], to carefully balancing the AlN-to-electrode thickness ratio [32], to use of Bragg reflection to prevent energy loss [33]. Unfortunately, none of the above methods raises the Q's of on-chip piezoelectric resonators to the values needed for RF channel-selection and frequency gating spectrum analysis.…”

Section: Metal Electrode-induced Degradationmentioning

confidence: 99%

Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Hung

Nguyen

2015

J. Microelectromech. Syst.

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A capacitive-piezoelectric (also known as, capacitive-piezo) transducer that combines the strengths of capacitive and piezoelectric mechanisms to achieve a combination of electromechanical coupling and Q higher than otherwise attainable by either mechanism separately, has allowed demonstration of a 1.2-GHz contour-mode aluminum nitride (AlN) ring resonator with Q > 3000 on par with the highest measured d 31 -transduced AlN-only piezoelectric resonators past 1 GHz, and a 50-MHz disk array with an even higher Q > 12 000. Here, the key innovation is to separate the piezoelectric resonator from its metal electrodes by tiny gaps to eliminate metal material and metal-to-piezoelectric interface losses thought to limit thin-film piezoelectric resonator Q, while also maintaining high electric field strength to preserve a strong piezoelectric effect. While Q increases, electromechanical coupling decreases, but the k 2 eff · Q product can still increase overall. More importantly, use of the capacitive-piezo transducer allows a designer to trade electromechanical coupling for Q, providing a very useful method to tailor Q and coupling for narrowband radio frequency (RF) channel-selecting filters for which Q trumps coupling. This capacitive-piezo transducer concept does not require dc-bias voltages and allows for much thicker electrodes that reduce series resistance without mass loading the resonant structure. The latter is especially important as resonators and their supports continue to scale toward even higher frequencies.[2013-0395]

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Section: Metal Electrode-induced Degradationmentioning

confidence: 99%

Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Hung

Nguyen

2015

J. Microelectromech. Syst.

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“…Indeed, plenty of researchers have sought to raise the Q"s of thin-film piezoelectric resonators, with approaches that span from reducing electrode roughness [6], to optimizing the electrode material [7], to carefully balancing the AlN-to-electrode thickness ratio [8], to use of a Bragg reflector to prevent energy loss [9]. Unfortunately, none of the above methods raises the Q"s of on-chip piezoelectric resonators anywhere near the >30,000 values needed for RF channel-selection and frequency gating spectrum analyzers.…”

Section: Raising Piezoelectric Resonator Qmentioning

confidence: 99%

Capacitive-Piezo Transducers for Higher Q Contour-Mode Aln Resonators at 1.2 GHZ

Hung¹,

Nguyen²

2010

2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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A "capacitive-piezo" transducer that combines the strengths of capacitive and piezoelectric mechanisms to achieve an impedance and Q simultaneously lower and higher, respectively, than otherwise attainable by either mechanism separately, has allowed demonstration of a 1.2-GHz contour-mode AlN ring resonator with a motional resistance of 889 Ω and Q=3,073 higher than so far measured for any other d 31 -transduced piezoelectric resonator at this frequency. Here, the key innovation is to separate the piezoelectric resonator from its metal electrodes by tiny gaps to eliminate metal material and metal-to-piezoelectric interface losses thought to limit thin-film piezoelectric resonator Q"s, while also maintaining high electric field strength to preserve a strong piezoelectric effect. In addition, this capacitive-piezo transducer concept does not require dc-bias voltages and allows for much thicker electrodes that then lower series resistance without mass loading the resonant structure. The latter is especially important as resonators and their supports continue to scale towards even higher frequencies.

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“…In SMR sensor Bragg reflector configuration provides the reflection of the acoustic waves in descending direction. Acoustic mirror is composed of high and low acoustic impedance layers (SiO2 and Mo) [10][11]. The SiO2 and Mo layers are stacked on one over another to form Bragg reflector.…”

Section: Introductionmentioning

confidence: 99%

Finite Element Modeling And Parametric Optimization of Solidly Mounted Film Bulk Acoustic Resonator For Its Performance Enhancement

Johar¹,

Bhatt²,

Sharma³

et al. 2021

Preprint

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This paper reports, the application of Taguchi Design of Experiments (DoE) and ANOVA (Analysis of Variance) for finding the optimal combinations and analysis of the effect of individual layer thickness on the performance of SMR sensor. The optimum combination of design parameters and its performance as a sensor have been predicted with DoE and validated through the finite element modeling (FEM) simulation. The optimization has been done to achieve enhancement in coupling coefficient of SMR sensor. The best optimized thickness of metal electrodes, piezoelectric, sensing, insulation low and high acoustic impedance layers have been found to be 0.2µm, 2µm, 0.68µm, 0.3µm, 1.028µm and 1.008µm, respectively. The results of the present study show that for the optimized dimension of SMR structure, simulated values of coupling coefficient (K2eff), Quality factor (Q) and figure of merit (FoM) are 0.075596 (or 7.5596%), 1171.6 and ≈ 88, respectively. Optimized structure performance has been compared with the existing SMR sensors and it is observed that proposed SMR exhibits performance enhancement in terms of FoM by ≈ 37 %.

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ZnO-based film bulk acoustic resonator devices on a specially designed Bragg reflector

Cited by 14 publications

References 9 publications

Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Capacitive-Piezoelectric Transducers for High-<inline-formula> <tex-math notation="LaTeX">$Q$ </tex-math></inline-formula> Micromechanical AlN Resonators

Capacitive-Piezo Transducers for Higher Q Contour-Mode Aln Resonators at 1.2 GHZ

Finite Element Modeling And Parametric Optimization of Solidly Mounted Film Bulk Acoustic Resonator For Its Performance Enhancement

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