ZnO-based thin film transistors having high refractive index silicon nitride gate

Remashan, K.; Jang, Jae‐Hyung; Hwang, Dae‐Kue; Park, S. J.

doi:10.1063/1.2804566

Cited by 26 publications

(19 citation statements)

References 14 publications

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“…Silicon nitride is a promising material to be used as an insulating matrix in metal/ceramic granular systems and multilayers, since it has been found to be a good candidate for applications in electronic devices due to its optical and transport properties, as well as for its chemical inertness at high temperatures. [15][16][17] We have observed that TM films and particles embedded in a Si 3 N 4 matrix display substantial differences in their magnetic properties. For Ni/Si 3 N 4 , the presence of an interlayer formed by nickel nitride with a rock salt cubic geometry results in a diminution of the magnetic signal of the samples.…”

Section: Introductionmentioning

confidence: 94%

Magnetic properties and short-range structure analysis of granular cobalt silicon nitride multilayers

Jiménez-Villacorta

Espinosa

Céspedes

et al. 2011

Journal of Applied Physics

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Effects of spacer thickness on perpendicular anisotropy L10-FePt/TiN/L10-FePt pseudo spin valves J. Appl. Phys. 111, 083909 (2012) Co/Au multilayers with graded magnetic anisotropy for magnetic field sensing Appl. Phys. Lett. 100, 162402 (2012) Design and micromagnetic simulation of the L10-FePt/Fe multilayer graded film J. Appl. Phys. 111, 073910 (2012) Precession frequency and fast switching dependence on the in-plane and out-of-plane dual spin-torque polarizers Appl. Phys. Lett. 100, 142409 (2012) Enhancement of perpendicular magnetic anisotropy through reduction of Co-Pt interdiffusion in (Co/Pt) multilayers Appl. Phys. Lett. 100, 142410 (2012) Additional information on J. Appl. Phys. The magnetic properties and local order of cobalt/silicon nitride metal-insulator multilayered system have been studied. Magnetization characterization reveals an evolution of the magnetic features by varying the metal layer thickness. Results show that multilayers with larger metal thickness (t) present a pure ferromagnetic character, whereas samples with t < 2 nm exhibit a granular superparamagnetic behavior, as it corresponds to discontinuous metal-insulator materials. An important decrease in the magnetization values for the clustered samples has also been observed. X-ray absorption near edge spectroscopy (XANES) and extended x-ray absorption fine structure (EXAFS) at the Co K-edge have been used to determine the local order and electronic configuration around cobalt. Results reveal the formation of an intermediate CoN phase likely located at the Co/Si 3 N 4 interface. Further insight in the electronic structure of cobalt atoms has been investigated through ab-initio XANES calculations based on Green function's multiple scattering formalism. Local-projected density of states (l-DOS) obtained by simultaneous computations has unveiled the effects of the nitrogen coordination in the electronic structure of the metal atom around the Fermi energy.

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Section: Introductionmentioning

confidence: 94%

Magnetic properties and short-range structure analysis of granular cobalt silicon nitride multilayers

Jiménez-Villacorta

Espinosa

Céspedes

et al. 2011

Journal of Applied Physics

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“…ZnO-based thin film transistors (TFTs) have attracted considerable attention, because of their superior properties that include wide band gap, transparency, and high field effect mobility compared to that of the conventional a-Si TFTs [1][2][3][4][5][6][7][8]. Recent advances in the use of various channel layers with proper materials have contributed to solving problems associated with conventional Sibased TFTs such as their low field effect mobility and opacity.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

Navamathavan¹,

Choi²,

Park

2009

Journal of Alloys and Compounds

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“…2 There are several reasons that make ZnO an attractive choice as a semiconductor active layer in thin-film transistors: low cost, stability, low processing temperature, stability under visible light due to its wide band gap (3.4 eV), and excellent electrical properties such as tunable electrical conductivity. 3 When used as the active channel layer in TFTs, the deposition parameters of ZnO can be optimized to achieve high mobility, [4][5][6][7][8][9] low threshold voltage, 4 and high current ratios (I on / I off ). 6,10 The channel mobility is directly related with the crystalline quality of the semiconductor active layer, and it can be improved by employing epitaxial deposition techniques 8,9 and/or by postdeposition annealing treatment.…”

Section: Introductionmentioning

confidence: 99%

“…3 When used as the active channel layer in TFTs, the deposition parameters of ZnO can be optimized to achieve high mobility, [4][5][6][7][8][9] low threshold voltage, 4 and high current ratios (I on / I off ). 6,10 The channel mobility is directly related with the crystalline quality of the semiconductor active layer, and it can be improved by employing epitaxial deposition techniques 8,9 and/or by postdeposition annealing treatment. 7 Zinc oxide thin films have been fabricated using several deposition techniques such as chemical vapor deposition (CVD), 11 pulsed laser deposition (PLD), 12 spin coating, 13 atomic layer deposition (ALD), 14 laser molecular-beam epitaxy (L-MBE), 8,9 and radiofrequency (RF) magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

Medina-Montes

Lee

Perez

et al. 2011

Journal of Elec Materi

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In this work we present the electrical characterization of ZnO-based thin-film transistors fabricated at room temperature. The ZnO films were deposited by radiofrequency magnetron sputtering at variable argon pressure (3 mTorr to 10 mTorr) at room temperature. The sputtered ZnO films were polycrystalline with hexagonal structure and electrical resistivity ranging from 10 1 X cm to 10 8 X cm for films deposited from 3 mTorr to 10 mTorr. The trend in the electrical behavior of the devices was found to be due to the variation of the electron concentration of the ZnO films. The devices with better performance showed a field-effect mobility of 2.9 cm 2 /Vs, threshold voltage of 20 V, I on / I off % 10 6 , and electrical resistivity of $10 8 X cm. In addition, linear behavior of I on /I off with deposition pressure was observed. The lowest I on /I off ratio ($2) was calculated for devices with ZnO layers deposited at 3 mTorr, and the highest ratio ($10 6 ) for devices processed at 10 mTorr. Hall-effect measurements were performed on ZnO films showing the lowest resistivity. The layer grown at 3 mTorr showed a Hall mobility of l H = 8.9 cm 2 /Vs and carrier concentration of n = 4.2 9 10 16 cm À3 with resistivity of q = 31.8 X cm. For films deposited at 5 mTorr, the Hall mobility, carrier concentration, and resistivity were l H = 7.9 cm 2 /Vs, n = 3.4 9 10 16 cm À3 , and q = 38.4 X cm, respectively. Films deposited at 8 mTorr and 10 mTorr could not be measured due to their high resistance.

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ZnO-based thin film transistors having high refractive index silicon nitride gate

Cited by 26 publications

References 14 publications

Magnetic properties and short-range structure analysis of granular cobalt silicon nitride multilayers

Magnetic properties and short-range structure analysis of granular cobalt silicon nitride multilayers

Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere

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